Fast open block erase in non-volatile memory structures
AssigneeSanDisk Technologies LLC
InventorsXiaojia Jia, Jiacen Guo
Life of this patent
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Abstract
A method for performing an erase operation of a partially programmed memory block of a non-volatile memory structure. The method comprises: (1) applying an erase voltage bias level to a channel region of the memory block, (2) applying a word line voltage level to all programmed word line(s) of the memory block, (3) applying a “float” condition to all unprogrammed word line(s) of the memory block, and (4) applying an erase verify operation to all word line(s) of the memory block, wherein the “float” condition comprises omitting application of the word line voltage to the unprogrammed word line(s).
Claims20
A method for performing an erase operation with respect to a partially programmed memory block of a non-volatile memory structure, comprising:
- applying an erase voltage bias level to a channel of the memory block;
- applying a word line voltage level to all programmed word lines of the memory block;
- applying a float condition to all unprogrammed word lines of the memory block;
- and
- applying an erase verify operation to all word lines of the memory block.
A memory controller, comprising:
- a communication pathway configured to couple to a memory block of a non-volatile memory structure;
- and
- the memory controller is configured to:
- determine whether the memory block is partially programmed;
- if the memory block is determined to be partially programmed, initiate an erase operation with respect to the memory block by applying an erase voltage bias level to a channel of the memory block;
- apply a word line voltage level to all programmed word lines of the memory block;
- apply a float condition to all unprogrammed word lines of the memory block;
- and
- apply an erase verify operation to all word lines of the memory block.
A non-volatile memory system, comprising:
- a partially programmed memory block;
- and
- a memory controller coupled to the memory block, the memory controller:
- initiating an erase operation with respect to the memory block;
- applying an erase voltage bias level to a channel of the memory block;
- applying a word line voltage level to all programmed word lines of the memory block;
- applying a float condition to all unprogrammed word lines of the memory block;
- and
- applying an erase verify operation to all word lines of the memory block.
Dependencies are inferred from the claim text.