Non-volatile memory device and programming method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsByungsoo Kim, Wandong Kim, Jaeyong Jeong
Life of this patent
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Abstract
A non-volatile memory device includes a memory cell array including memory cells respectively connected to bit lines; and a control logic unit configured to control a program operation with respect to the memory cells. The control logic unit is configured to perform a normal program verify operation with respect to the memory cells by using a normal program verify condition, during the program operation, and, based on a suspend command that is received during the program operation, perform an initial program verify operation with respect to the memory cells by using an initial program verify condition that is different from the normal program verify condition.
Claims20
A non-volatile memory device comprising:
- a memory cell array including memory cells respectively connected to bit lines;
- and
- a control logic unit configured to control a program operation with respect to the memory cells, wherein the control logic unit is further configured to:
- perform a normal program verify operation with respect to the memory cells by using a normal program verify condition, during the program operation, and
- based on a suspend command that is received during the program operation, perform an initial program verify operation with respect to the memory cells by using an initial program verify condition that is different from the normal program verify condition,
- wherein the normal program verify condition comprises a normal program verify voltage, and
- the initial program verify condition comprises an initial program verify voltage that is different from the normal program verify voltage,
- wherein the initial program verify voltage includes a first initial program verify voltage level for a first word line and a second initial program verify voltage level for a second word line, and the first initial program verify voltage level differs from the second initial program verify voltage level according to a position of the first word line relative to the second word line.
A method of programming a non-volatile memory device, the method comprising:
- applying a first program voltage to a selected word line to which memory cells are connected, in response to a program command;
- performing an initial program verify operation by applying an initial program verify voltage to the selected word line, in response to a suspend command or a resume command received after the suspend command;
- applying a second program voltage to the selected word line in response to the resume command;
- and
- performing a normal program verify operation by applying, to the selected word line, a normal program verify voltage that is different from the initial program verify voltage,
- wherein the initial program verify voltage includes a first initial program verify voltage level for a first word line and a second initial program verify voltage level for a second word line, and the first initial program verify voltage level differs from the second initial program verify voltage level according to a position of the first word line relative to the second word line.
Dependencies are inferred from the claim text.