RRAM filament spatial localization using a laser stimulation
AssigneeInternational Business Machines Corporation
InventorsFranco Stellari, Ernest Y. Wu, Takashi Ando, Peilin Song
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AssigneeInternational Business Machines Corporation
InventorsFranco Stellari, Ernest Y. Wu, Takashi Ando, Peilin Song
Estimating the term…
System and method to localize a position of an RRAM filament of resistive memory device at very low bias voltages using a scanning laser beam. The approach is non-invasive and allows measurement of a large number of devices for creating statistics relating to the filament formation. A laser microscope system is configured to perform a biasing the RRAM cell with voltage (or current). Concurrent to the applied bias, a laser beam is generated and aimed at different positions of the RRAM cell (e.g., by a raster scanning). Changes in the current (or voltage) flowing through the cell are measured. The method creates a map of the current (or voltage) changes at the different laser positions and detects a spot in the map corresponding to higher (or lower) current (or voltage). The method determines the (x,y) position of the spot compared to the edge/center of the RRAM cell.
A method for determining a spatial location of a filament in a resistive random access memory (RRAM) cell, the method comprising:
An apparatus for determining a spatial location of a filament in a resistive random access memory (RRAM) cell, the apparatus comprising:
A computer program product for determining a spatial location of a filament in a resistive random access memory (RRAM) cell, the computer program product comprising a computer readable storage medium having program instructions embodied therewith, the program instructions executable by a processor to cause the processor to:
Dependencies are inferred from the claim text.