Memory device having physical unclonable function and memory system including the memory device

A memory device comprising:

• a memory cell region including word lines stacked in a first direction, channel structures passing through the word lines in the first direction, and a first metal pad;
• a peripheral circuit region including a second metal pad and connected to the memory cell region in the first direction by the first metal pad and the second metal pad;
• and
• a physical unclonable function (PUF) circuit including a plurality of through electrodes passing through the memory cell region in the first direction, and configured to
• generate PUF data according to resistance values of the plurality of through electrodes, and
• generate the PUF data based on a node voltage between through electrodes connected in series, from among the plurality of through electrodes.

A memory system comprising:

• a memory device;
• and
• a memory controller configured to transmit a physical unclonable function (PUF) data request command to the memory device in response to an authentication request received from a host, and generate an authentication key based on PUF data received from the memory device,
• wherein the memory device includes
• a memory cell region including word lines stacked in a first direction, channel structures passing through the word lines in the first direction, and a first metal pad;
• a peripheral circuit region including a second metal pad and connected to the memory cell region in the first direction by the first metal pad and the second metal pad;
• and
• a PUF circuit including a plurality of through electrodes passing through the memory cell region in the first direction, and configured to
• generate PUF data according to resistance values of the plurality of through electrodes, and
• generate the PUF data based on a node voltage between through electrodes connected in series, among the plurality of through electrodes.