Method for reading and writing and memory device
AssigneeChangxin Memory Technologies, Inc.
InventorsShuliang Ning, Jun He, Zhan Ying, Jie Liu
Life of this patent
Estimating the term…
Abstract
The embodiments provide a method for reading and writing and a memory device. The method includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; and storing the address information pointed to by the read command into a memory bit of a preset memory space if an error occurs in the data to be read out, wherein the preset memory space is provided with a plurality of the memory bits, and each of the plurality of memory bits is associated with a spare memory cell.
Claims10
A method for reading and writing, comprising:
- applying a read command to a memory device, the read command pointing to address information;
- reading data to be read out from a memory cell corresponding to the address information pointed to by the read command;
- and
- storing the address information pointed to by the read command into a memory bit of a preset memory space if an error occurs in the data to be read out, wherein the preset memory space is provided with a plurality of memory bits, and each of the plurality of memory bits being associated with a spare memory cell;
- applying a write command to the memory device, and comparing address information pointed to by the write command with the address information stored in the preset memory space;
- performing a write operation on the memory cell corresponding to the address information pointed to by the write command if the address information pointed to by the write command is different from the address information stored in the preset memory space;
- and
- stopping performing the write operation on the memory cell corresponding to the address information pointed to by the write command, and performing a write operation on the spare memory cell corresponding to a first memory bit where the address information is stored in the preset memory space if the address information pointed to by the write command is identical to the address information stored in the preset memory space.
A memory device, comprising:
- a command receiving unit, configured to receive a read command or a write command;
- a memory cell, configured to correspond to address information pointed to by the read command or write command;
- a spare memory cell;
- a preset memory space, provided with a plurality of memory bits configured for storing address information corresponding to a memory cell with data error, each of the plurality of memory bits being associated with one spare memory cell;
- and
- an execution unit, configured to perform a read operation or a write operation on the memory cell or the spare memory cell;
- a comparison unit, wherein the comparison unit is connected to the command receiving unit and the preset memory space, and the comparison unit is configured to compare the address information pointed to by the read command or write command with the address information stored in the preset memory space;
- wherein the execution unit is further connected to the comparison unit, and the execution unit is configured to:
- perform a read operation or a write operation on the memory cell corresponding to the address information pointed to by the read command or write command according to a result outputted by the comparison unit;
- stop performing the read operation or the write operation on the memory cell corresponding to the address information pointed to by the read command or write command;
- and
- perform the read operation or the write operation on the spare memory cell corresponding to a first memory bit where the address information is stored in the preset memory space.
Dependencies are inferred from the claim text.