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US 11,899,369 B2Granted
Treatment liquid, method for washing substrate, and method for removing resist
AssigneeFUJIFILM Corporation
InventorsTomonori Takahashi, Tetsuya Kamimura
Life of this patent
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Abstract
A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10−12 to 10−4.
Claims21
A treatment liquid for a semiconductor device, comprising:
- an alkanolamine;
- a hydroxylamine;
- an organic solvent;
- coarse particles having a diameter of 0.2 μm or more;
- Ca;
- Fe;
- and
- Na,
- wherein the number of coarse particles in 1 mL of the treatment liquid is 10 or less,
- the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and
- each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10−12 to 10−4.
8 more elements
A treatment liquid for a semiconductor device, comprising:
- an alkanolamine;
- a hydroxylamine;
- an organic solvent;
- coarse particles having a diameter of 0.2 μm or more;
- Ca;
- Fe;
- and
- Na,
- wherein the organic solvent is an alkylene glycol,
- the number of coarse particles in 1 mL of the treatment liquid is 10 or less,
- the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass,
- the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and
- each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10−12 to 10−4.
10 more elements
Dependencies are inferred from the claim text.