Manufacturing method of semiconductor device and semiconductor processing system
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Kai Chen, Chia-Hung Chung, Ko-Bin Kao, Su-Yu Yeh, Li-Jen Wu, Zhi-You Ke, Ming-Hung Lin
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Abstract
A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.
Claims20
A method of manufacturing a semiconductor device, comprising:
- developing an exposed photoresist layer using a developer to form a patterned photoresist layer;
- discharging an ammonia gas by-product of the developer from a gas outlet of a developer supplying unit;
- and
- disposing an ammonia gas monitor near to the gas outlet of the developer supplying unit.
A method of manufacturing a semiconductor device, comprising:
- developing an exposed photoresist layer using a developer supplied by a developer supplying unit;
- discharging an ammonia gas by-product of the developer through a gas outlet of the developer supplying unit into a treating tool;
- retaining the ammonia gas by-product in the treating tool;
- disposing an ammonia gas monitor near to the gas outlet of the developer supplying unit;
- and
- monitoring a concentration of the ammonia gas by-product by the ammonia gas monitor.
A semiconductor processing system, comprising:
- a developer supplying unit comprising a gas outlet;
- a treating tool, connected to the gas outlet of the developer supplying unit;
- and
- an ammonia gas monitor near to the gas outlet of the developer supplying unit.
Dependencies are inferred from the claim text.