Lithography mask

A mask fabrication process comprising:

• providing a substrate coated with a light absorbing layer and a resist layer;
• and
• performing an exposure/development cycle and an etch step to remove portions of the light absorbing layer to define (i) non-absorbing pattern regions of a mask pattern surrounded by a light absorbing border and (ii) a peripheral region outside of the light absorbing border in which the light absorbing layer is removed by the exposure/development cycle;
• wherein the peripheral region includes a first peripheral region that extends from an outer perimeter of the light absorbing border to a first edge of the substrate and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, the first edge of the substrate and the second edge of the substrate being on opposite sides of the mask pattern;
• and
• wherein the peripheral region does not extend from the outer perimeter of the light absorbing border to a third edge of the substrate, and the peripheral region does not extend from the outer perimeter of the light absorbing border to a fourth edge of the substrate, the third edge of the substrate and the fourth edge of the substrate being on opposite sides of the mask pattern.

A mask for use in a semiconductor lithography process, the mask comprising:

• a substrate having first, second, third, and fourth edges in which the first and second edges are on opposite sides of the substrate and the third and fourth edges are on opposite sides of the substrate;
• a light absorbing layer patterned to define a mask pattern disposed on the substrate and a light absorbing border surrounding the mask pattern;
• wherein a peripheral region is located outside of the light absorbing border on two sides of the light absorbing border, the light absorbing layer not being disposed on the substrate in the peripheral region;
• wherein the light absorbing border is inset from the first and second edges of the substrate to define the peripheral region located outside of the light absorbing border;
• and
• wherein the light absorbing border is not inset from the third and fourth edges of the substrate.