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US 11,899,311 B2Granted
Method for driving liquid crystal display device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHajime Kimura
Life of this patent
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Abstract
A low-resolution image is displayed at high resolution and power consumption is reduced. Resolution is made higher by super-resolution processing. Then, display is performed with the luminance of a backlight controlled by local dimming after the super-resolution processing. By controlling the luminance of the backlight, power consumption can be reduced. Further, by performing the local dimming after the super-resolution processing, accurate display can be performed.
Claims3
A liquid crystal display device comprising:
- a substrate;
- a gate electrode over the substrate;
- a gate insulating layer over the gate electrode;
- a first oxide semiconductor layer over the gate insulating layer;
- a second oxide semiconductor layer over the first oxide semiconductor layer;
- a source electrode and a drain electrode electrically connected to the second oxide semiconductor layer;
- a first insulating layer over the second oxide semiconductor layer;
- and
- a first electrode of a display element over the first insulating layer and electrically connected to the source electrode or the drain electrode via an opening in the first insulating layer,
- wherein the first oxide semiconductor layer comprises a first element, a second element, and a third element, and
- wherein the second oxide semiconductor layer comprises the first element, the second element, and the third element.
8 more elements
A liquid crystal display device comprising:
- a glass substrate;
- a gate electrode over the glass substrate;
- a gate insulating layer over the gate electrode;
- a first oxide semiconductor layer over the gate insulating layer;
- a second oxide semiconductor layer over the first oxide semiconductor layer;
- a source electrode and a drain electrode electrically connected to the second oxide semiconductor layer;
- a first insulating layer over the second oxide semiconductor layer;
- and
- a first electrode of a liquid crystal element over the first insulating layer and electrically connected to the source electrode or the drain electrode via an opening in the first insulating layer,
- wherein the first oxide semiconductor layer comprises at least one of indium, gallium, and zinc,
- wherein the second oxide semiconductor layer comprises at least one of indium, gallium, and zinc,
- wherein the first oxide semiconductor layer comprises a first region,
- wherein the second oxide semiconductor layer comprises a second region,
- wherein the first region has a smaller thickness than the second region, and
- wherein the first oxide semiconductor layer comprises a channel region of a first transistor.
12 more elements
A liquid crystal display device comprising:
- a glass substrate;
- a gate electrode over the glass substrate;
- a gate insulating layer over the gate electrode;
- a first oxide semiconductor layer over the gate insulating layer;
- a second oxide semiconductor layer over the first oxide semiconductor layer;
- a source electrode and a drain electrode electrically connected to the second oxide semiconductor layer;
- a first insulating layer over the second oxide semiconductor layer;
- and
- a first electrode of a liquid crystal element over the first insulating layer and electrically connected to the source electrode or the drain electrode via an opening in the first insulating layer,
- wherein the first oxide semiconductor layer comprises at least one of indium, gallium, and zinc,
- wherein the second oxide semiconductor layer comprises at least one of indium, gallium, and zinc,
- wherein the first oxide semiconductor layer comprises a first region,
- wherein the second oxide semiconductor layer comprises a second region,
- wherein the first region has a smaller thickness than the second region,
- wherein the first oxide semiconductor layer comprises a channel region of a first transistor,
- wherein the gate insulating layer comprises a layered structure of a first insulating film including silicon and nitrogen and a second insulating film including silicon and oxygen,
- wherein the first electrode of the liquid crystal element comprises a region provided below a top surface of the source electrode or the drain electrode, and
- wherein the source electrode or the drain electrode is in contact with a side surface of the first oxide semiconductor layer.
15 more elements
Dependencies are inferred from the claim text.