Photothermal modification of high index dielectric structures

A product comprising:

• a. a support structure,
• b. a first plurality of high-index dielectric structures, said first plurality of high-index dielectric structures being supported by the support structure,
• c. a second plurality of high-index dielectric structures, wherein the second plurality of high-index dielectric structures is a sub-set of the first plurality of high-index dielectric structures,
• wherein a geometry specifically of the second plurality of high-index dielectric structures may be changed, wherein said changing the geometry may carried out by photothermally melting at least a portion of each of the high-index dielectric structures within the second plurality of high-index dielectric structures by irradiating the second plurality of high-index dielectric structures with incident electromagnetic radiation having an incident intensity in a plane of the second plurality of high-index dielectric structures and thereby exciting resonances associated with each of the high-index dielectric structures within the second plurality of high-index dielectric structures,
• wherein said support structure comprises a first plurality of topographical features comprising topographical pillars or topographical holes formed on a surface of the support structure,
• and wherein the first plurality of high-index dielectric structures are given by:
• a plurality of high-index dielectric structures on said topographical pillars or in said topographical holes,
• and
• a plurality of holes in a high-index dielectric film, wherein said holes correspond to said topographical features,
• and wherein the relative permittivity at 532 nm of the first plurality of high-index dielectric structures is equal to or larger than 5.

A method for geometrically modifying high-index dielectric structures on a support structure, comprising:

• providing a support structure comprising topographical pillars or topographical holes formed on a surface of the support structure, wherein said support structure supports a first plurality of high-index dielectric structures, wherein the first plurality of high-index dielectric structures are given by a plurality of high-index dielectric structures on said topographical pillars or in said topographical holes, and a plurality of holes in a high-index dielectric film, wherein said holes correspond to said topographical features, wherein the relative permittivity at 532 nm of the first plurality of high-index dielectric structures is equal to or larger than 5;
• and
• changing a geometry of the high-index dielectric structures located on said topographical pillars or in said topographical holes and within a second plurality of the high-index dielectric structures, wherein the second plurality of high-index dielectric structures is a sub-set of the first plurality of high-index dielectric structures, by photothermally melting at least a portion of each of the high-index dielectric structures within the second plurality of high-index dielectric structures by irradiating the second plurality of high-index dielectric structures with incident electromagnetic radiation having an incident intensity in a plane of the second plurality of high-index dielectric structures and thereby exciting resonances associated with each of the high-index dielectric structures within the second plurality of high-index dielectric structures.

A product comprising:

• a support structure comprising topographical pillars or topographical holes formed on a surface of the support structure, wherein said support structure supports a first plurality of high-index dielectric structures, wherein the first plurality of high-index dielectric structures are given by a plurality of high-index dielectric structures on said topographical pillars or in said topographical holes, and a plurality of holes in a high-index dielectric film, wherein said holes correspond to said topographical features, wherein the relative permittivity at 532 nm of the first plurality of high-index dielectric structures is equal to or larger than 5;
• and wherein a geometry of the high-index dielectric structures located on said topographical pillars or in said topographical holes and within a second plurality of the high-index dielectric structures, wherein the second plurality of high-index dielectric structures is a sub-set of the first plurality of high-index dielectric structures, may be changed by photothermally melting at least a portion of each of the high-index dielectric structures within the second plurality of high-index dielectric structures by irradiating the second plurality of high-index dielectric structures with incident electromagnetic radiation having an incident intensity in a plane of the second plurality of high-index dielectric structures and thereby exciting resonances associated with each of the high-index dielectric structures within the second plurality of high-index dielectric structures.

A method for geometrically modifying high-index dielectric structures on a support structure, said method comprising:

• a. providing a support structure,
• b. providing a first plurality of high-index dielectric structures, said first plurality of high-index dielectric structures being supported by the support structure,
• c. changing a geometry specifically of high-index dielectric structures within a second plurality of high-index dielectric structures, wherein the second plurality of high-index dielectric structures is a sub-set of the first plurality of high-index dielectric structures,
• wherein said changing the geometry is carried out by photothermally melting at least a portion of each of the high-index dielectric structures within the second plurality of high-index dielectric structures by irradiating the second plurality of high-index dielectric structures with incident electromagnetic radiation having an incident intensity in a plane of the second plurality of high-index dielectric structures,
• and thereby exciting resonances associated with each of the high-index dielectric structures within the second plurality of high-index dielectric structures,
• wherein said support structure comprises a first plurality of topographical features comprising topographical pillars or topographical holes formed on a surface of the support structure,
• and wherein the first plurality of high-index dielectric structures are given by:
• a plurality of high-index dielectric structures on said topographical pillars or in said topographical holes,
• and
• a plurality of holes in a high-index dielectric film, wherein said holes correspond to said topographical features,
• and
• wherein said first plurality of high-index dielectric structures are prepared by depositing a high-index dielectric film on the support structure on said topographical pillars or in said topographical holes, and on the support structure between said topographical pillars or said topographical holes,
• and wherein the relative permittivity at 532 nm of the first plurality of high-index dielectric structures is equal to or larger than 5.