Method of manufacturing a packaged device with optical pathway
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsien-Wei Chen, Ming-Fa Chen
Life of this patent
Estimating the term…
Abstract
A packaged device includes an optical IC having an optical feature therein. An interconnect structure including layers of conductive features embedded within respective layers of dielectric materials overlie the optical feature. The interconnect structure is patterned to remove the interconnect structure from over the optical feature and a dielectric material having optically neutral properties, relative to a desired light wavelength(s) is formed over the optical feature. One or more electronic ICs may be bonded to the optical IC to form an integrated package.
Claims20
A method comprising;
- forming an optical feature on a first integrated circuit die;
- forming an interconnect structure overlying the first integrated circuit die, the interconnect structure including a plurality of stacked materials, wherein the interconnect structure imposes a first degree of optical interference on a light path extending to the optical feature;
- removing a portion of the interconnect structure to thereby form a gap in the interconnect structure overlying the optical feature;
- and
- filling the gap with a first bonding dielectric layer, the first bonding dielectric layer imposing a second degree of optical interference on the light path that is less than the first degree of optical interference, and
- fusion bonding the first bonding dielectric layer to a second bonding dielectric layer, the second bonding dielectric layer being a topmost layer of a second integrated circuit die.
A method comprising:
- forming an optical feature on a first integrated circuit die;
- forming an interconnect structure overlying the first integrated circuit die, the interconnect structure including a plurality of stacked dielectric layers wherein optical interfaces exist between respective ones of the stacked dielectric layers;
- forming a gap in the interconnect structure by removing a portion of the interconnect structure overlying the optical feature;
- and
- filling the gap and covering the interconnect structure with a first bonding dielectric layer;
- fusion bonding a second integrated circuit die to the first bonding dielectric layer;
- and
- forming a protective layer over the first bonding dielectric layer and encapsulating the second integrated circuit die, wherein the protective layer and the first bonding dielectric layer form an optical path over the optical feature.
A method comprising:
- forming an optical integrated circuit including
- a through substrate via (TSV) extending through a back side of a silicon on insulator substrate;
- an optical feature at a top side of the substrate, and,
- an interconnect structure over the top side of the substrate, the interconnect structure providing electrical connection to electrical components of the optical integrated circuit;
- removing a portion of the interconnect structure overlying the optical feature;
- after removing the portion of the interconnect structure overlying the optical feature, depositing, over the optical feature, an optical path of dielectric material extending through the interconnect structure, the optical path of dielectric material being free of optical interfaces from a top surface of the dielectric material to a bottom surface to the interconnect structure, and
- fusion bonding an electronic integrated circuit to a surface of the dielectric material forming the optical path of dielectric material.
Dependencies are inferred from the claim text.