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US 11,899,240 B2Granted
Photonic device, system and method of making same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWeiwei Song, Stefan Rusu
Life of this patent
Estimating the term…
Abstract
Photonic device, system and methods of making photonic devices and systems, the method including: providing a substrate, forming an insulator layer over the substrate, depositing a plurality of waveguide layers and a plurality of insulator spacers at different vertical levels over the insulator layer, wherein adjacent waveguide layers in the plurality of waveguide layers are isolated by one or more insulator spacers in the plurality of insulator spacers, and forming a plurality of waveguide patterns at the plurality of waveguide layers, wherein at least two waveguide patterns at different vertical levels in the plurality of waveguide patterns are coupled.
Claims20
A method for forming a photonic device, the method comprising:
- providing a substrate;
- forming a first insulator layer over the substrate;
- depositing a first plurality of waveguide layers and a first plurality of insulator spacers at different vertical levels over the first insulator layer, wherein adjacent waveguide layers in the first plurality of waveguide layers are isolated by one or more insulator spacers in the first plurality of insulator spacers;
- forming a first plurality of waveguide patterns at the first plurality of waveguide layers, wherein at least two waveguide patterns at different vertical levels in the first plurality of waveguide patterns are coupled;
- removing the substrate;
- forming a second insulator layer over the first plurality of waveguide patterns;
- forming a handling wafer over the second insulator layer;
- depositing a second plurality of waveguide layers and a second plurality of insulator spacers at different vertical levels under the first insulator layer, wherein adjacent waveguide layers in the second plurality of waveguide layers are isolated by one or more insulator spacers in the second plurality of insulator spacers;
- and
- forming a second plurality of waveguide patterns at the second plurality of waveguide layers, wherein at least two waveguide patterns at different vertical levels in the second plurality of waveguide patterns are coupled.
7 more elements
A photonic device, comprising:
- a substrate;
- a first insulator layer over the substrate;
- a first plurality of waveguide layers and a first plurality of insulator spacers deposited at different vertical levels over the first insulator layer, wherein adjacent waveguide layers in the first plurality of waveguide layers are isolated by one or more insulator spacers in the first plurality of insulator spacers;
- a first plurality of waveguide patterns formed at the first plurality of waveguide layers, wherein at least two waveguide patterns at different vertical levels in the first plurality of waveguide patterns are coupled;
- a second insulator layer over the first plurality of waveguide patterns:
- a handling wafer over the second insulator layer;
- a second plurality of waveguide layers and a second plurality of insulator spacers deposited at different vertical levels under the first insulator layer, wherein adjacent waveguide layers in the second plurality of waveguide layers are isolated by one or more insulator spacers in the second plurality of insulator spacers;
- and
- a second plurality of waveguide patterns formed at the second plurality of waveguide layers, wherein at least two waveguide patterns at different vertical levels in the second plurality of waveguide patterns are coupled.
6 more elements
An integrated circuit (IC), comprising:
- one or more layout patterns;
- and
- at least one photonic device coupled to the one or more layout patterns by one or more vias, wherein the at least one photonic device comprises:
- a substrate;
- a first insulator layer over the substrate;
- a first plurality of waveguide layers and a first plurality of insulator spacers deposited at different vertical levels over the first insulator layer, wherein adjacent waveguide layers in the first plurality of waveguide layers are isolated by one or more insulator spacers in the first plurality of insulator spacers;
- a first plurality of waveguide patterns formed at the first plurality of waveguide layers, wherein at least two waveguide patterns at different vertical levels in the first plurality of waveguide patterns are coupled;
- a second insulator layer over the first plurality of waveguide patterns;
- a handling wafer over the second insulator layer;
- a second plurality of waveguide layers and a second plurality of insulator spacers deposited at different vertical levels under the first insulator layer, wherein adjacent waveguide layers in the second plurality of waveguide layers are isolated by one or more insulator spacers in the second plurality of insulator spacers;
- and
- a second plurality of waveguide patterns formed at the second plurality of waveguide layers, wherein at least two waveguide patterns at different vertical levels in the second plurality of waveguide patterns are coupled.
9 more elements
Dependencies are inferred from the claim text.