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US 11,898,983 B2Granted
Devices with field effect transistors
AssigneeIllumina, Inc.
InventorsBoyan Boyanov, Rico Otto, Jeffrey G. Mandell
Life of this patent
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Abstract
Devices and methods of using the devices are disclosed which can provide scalability, improved sensitivity and reduced noise for sequencing polynucleotide. Examples of the devices include a biological or solid-state nanopore, a field effect transistor (FET) sensor with improved gate controllability over the channel, and a porous structure.
Claims28
A device, comprising:
- a middle well comprising a fluidic tunnel;
- a cis well associated with a cis electrode, wherein a first nanoscale opening is disposed between the cis well and the middle well;
- a trans well associated with a trans electrode, wherein a porous structure is disposed between the trans well and the middle well;
- and
- a field effect transistor (FET) positioned between the first nanoscale opening and the porous structure, the FET comprising:
- a source, a drain, and a channel connecting the source to the drain, wherein the channel comprises a gate oxide layer having an upper surface fluidically exposed to the middle well,
- wherein the middle well fluidically connects the cis well to the trans well, and wherein the fluidic tunnel does not extend through the channel.
4 more elements
A device, comprising:
- a middle well;
- a cis well associated with a cis electrode, wherein a first nanoscale opening is disposed between the cis well and the middle well;
- a trans well associated with a trans electrode, wherein a second nanoscale opening is disposed between the trans well and the middle well;
- and
- a field effect transistor (FET) positioned between the first nanoscale opening and the second nanoscale opening, the FET comprising:
- a source, a drain, and a channel connecting the source to the drain,
- wherein the channel comprises a gate oxide layer operably connected to a metal structure,
- wherein the gate oxide layer is not fluidically exposed,
- wherein the middle well fluidically connects the cis well to the trans well, and
- wherein the metal structure has at least one surface fluidically exposed to the middle well.
7 more elements
A device, comprising:
- a middle well comprising a fluidic tunnel;
- a cis well associated with a cis electrode, wherein a first nanoscale opening is disposed between the cis well and the middle well;
- a trans well associated with a trans electrode, wherein a second nanoscale opening is disposed between the trans well and the middle well;
- and
- a field effect transistor (FET) positioned between the first nanoscale opening and the second nanoscale opening, the FET comprising:
- a source, a drain, and a channel connecting the source to the drain,
- wherein the channel comprises a gate oxide layer having an upper surface fluidically exposed to the middle well,
- wherein the middle well fluidically connects the cis well to the trans well,
- wherein the fluidic tunnel does not extend through the channel,
- wherein the gate oxide layer further comprises a lower surface fluidically exposed to the middle well.
7 more elements
Dependencies are inferred from the claim text.