EUV mask inspection device using multilayer reflection zone plate

An EUV mask inspection device using a multilayer reflection zone plate for metrology and inspection of an EUV mask used in an EUV exposure process during a semiconductor device manufacturing process, which comprises:

• an EUV light source for outputting EUV light with a wavelength ranging from 5 nm to 15 nm;
• a multilayer reflection zone plate having an EUV reflection multilayer film, which is a planar substrate, and a zone plate pattern;
• and an EUV lighting unit for creating EUV illumination light by obtaining 1st diffraction light reflected after radiating EUV light output from the EUV light source to the multilayer reflection zone plate, and the EUV mask inspection device comprising:
• an aperture for providing monochromatic light or reducing a light radiation area by reducing a linewidth of optical wavelength radiated from the EUV lighting unit;
• a transmissive zone plate for forming expanded light by collecting reflected or scattered light after radiating light passing through the aperture to the EUV mask;
• and
• an image sensor for measuring intensity of light through EUV mask measured light, which is the light passing through the transmissive zone plate.