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US 11,898,916 B2Granted
Device for temperature monitoring of a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Zeng Kang, Wen-Shen Chou, Yung-Chow Peng
Life of this patent
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Abstract
A semiconductor device includes a plurality of active area structures. One or more active devices include portions of the plurality of active area structures. A metal layer is formed on the plurality of active area structures and separated from the one or more active devices by one or more dummy gate layers. The metal layer is configured to measure, due to a change of resistance in the metal layer, a temperature of the plurality of active area structures.
Claims20
A semiconductor device comprising:
- a plurality of active area structures;
- one or more active devices including portions of the plurality of active area structures;
- and
- a metal layer overlying the plurality of active area structures and separated from the one or more active devices by one or more dummy gate layers, wherein the metal layer is configured to measure, due to a change of resistance in the metal layer, a temperature of the plurality of active area structures.
1 more element
A semiconductor device comprising:
- a plurality of active area structures;
- one or more active devices including portions of the plurality of active area structures;
- a first dummy gate layer;
- a second dummy gate layer;
- and
- a metal layer overlying the plurality of active area structures, positioned between the first dummy gate layer and the second dummy gate layer, and electrically isolated from the one or more active devices, wherein the metal layer is configured to measure, due to a change of resistance in the metal layer, a temperature of the plurality of active area structures.
3 more elements
A semiconductor device comprising:
- a plurality of active area structures;
- a first active device and a second active device including portions of the plurality of active area structures, wherein the first active device and the second active device are arranged in a cascode configuration;
- a first dummy gate layer;
- a second dummy gate layer, wherein the first dummy gate layer and the second dummy gate layer are positioned between the first active device and the second active device;
- and
- a metal layer overlying the plurality of active area structures and positioned between the first dummy gate layer and the second dummy gate layer, wherein the metal layer is configured to measure, due to a change of resistance in the metal layer, a temperature of the plurality of active area structures.
3 more elements
Dependencies are inferred from the claim text.