# US 11,898,254 B2 · Processing method for fluorination of fluorination-target component for semiconductor fabrication equipment, which minimizes generation of contaminant particles, and fluorinated component obtained thereby > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,898,254 B2 - Document ID: US11898254B2 - Status: Granted - Kind: B2 - Application number: 17/965,802 - Filed: 2022-10-14 - Published: 2023-07-06 - Granted: 2024-02-13 - Earliest claimed: 2021-12-30 - Assignees: WONIK QNC Corporation - Applicants: WONIK QNC Corporation - Inventors: Yoonjae Yu; Seungyoung Oh; Eunyoung Choi; Joohee Jang; Soyoung Choi; Sanghyun Cho - Web page: https://patentgrep.com/patent/US11898254B2 ## CPC - C23C 8/36: using ionised gases, e.g. ionitriding - H01J 37/32477: {characterised by the means for protecting vessels or internal parts, e.g. coatings} - C23C 8/06: using gases (C23C8/36 takes precedence) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract Disclosed are a processing method for fluorination of a fluorination-target component for semiconductor fabrication equipment, which may realize high density and high strength by fluorinating the fluorination-target component using a fluorinating gas excited into plasma, and at the same time, may significantly reduce plasma contaminant particles which are generated during formation of a fluoride coating, and a fluorinated component obtained by the method. ## Claims ### Claim 1 A processing method for fluorinating a fluorination-target component, coated with Y2O3 or YAG to have plasma resistance, in a semiconductor dry etching equipment, the method comprising: a first step of placing the fluorination-target component in a processing chamber having a plasma reaction space; a second step of introducing a mixed gas into the processing chamber, the mixed gas being composed of a discharge gas selected from among He, Ne, Ar, Kr, and Xe, a fluorine-free reactive gas selected from among O2, N2, and air, and a fluorine-containing reactive gas selected from among fluorocarbons, including CF4, C2F6, and C4F8, and nitrogen trifluoride (NF3); a third step of supplying the mixed gas, introduced into the processing chamber, into the plasma reaction space; and a fourth step of generating plasma in the plasma reaction space by applying high-frequency power to the processing chamber, and fluorinating the fluorination-target component by the generated plasma and fluorine-containing radical gas such that a fluoride coating layer is formed on a surface of the fluorination-target component, the fluoride coating layer including yttrium oxyfluoride (YOF) forming a surface layer of the fluoride coating layer, wherein the high-frequency power in the fourth step is 300 to 400 W at a frequency of 1 to 100 MHz, and wherein a content of a fluorine (F) component in the yttrium oxyfluoride (YOF) forming the surface layer of the fluoride coating layer is 1 to 10 at. % (atomic percentage). ### Claim 2 (depends on 1) The processing method according to claim 1, wherein an atmosphere in the processing chamber in the first to fourth steps is an atmospheric-pressure atmosphere or a vacuum atmosphere. ### Claim 3 (depends on 2) The processing method according to claim 2, wherein the fluoride coating layer on the fluorination-target component is formed to have a thickness of 150 to 200 μm. ### Claim 4 (depends on 1) The processing method according to claim 1, wherein the third step of supplying the mixed gas comprises supplying argon (Ar) as the discharge gas, oxygen (O2) as the fluorine-free reactive gas, and carbon tetrafluoride (CF4) as the fluorine-containing reactive gas, and a flow rate ratio of Ar:O2:CF4 is 0.1 to 60:0.1 to 10:0.1 to 10. ### Claim 5 (depends on 4) The processing method according to claim 4, wherein the fluoride coating layer on the fluorination-target component is formed to have a thickness of 150 to 200 μm. ### Claim 6 (depends on 1) The processing method according to claim 1, wherein a temperature inside the processing chamber is room temperature to 400° C. ### Claim 7 (depends on 6) The processing method according to claim 6, wherein the fluoride coating layer on the fluorination-target component is formed to have a thickness of 150 to 200 μm. ### Claim 8 (depends on 1) The processing method according to claim 1, wherein the third step and the fourth step are repeated. ### Claim 9 (depends on 8) The processing method according to claim 8, wherein the fluoride coating layer on the fluorination-target component is formed to have a thickness of 150 to 200 μm. ### Claim 10 (depends on 1) The processing method according to claim 1, wherein a distance between the fluorination-target component and the plasma is 2 mm to 5 mm. ### Claim 11 (depends on 10) The processing method according to claim 10, wherein the fluoride coating layer on the fluorination-target component is formed to have a thickness of 150 to 200 μm. ### Claim 12 (depends on 1) The processing method according to claim 1, wherein the fluoride coating layer on the fluorination-target component is formed to have a thickness of 150 to 200 μm.