# US 11,898,243 B2 · Method of forming vanadium nitride-containing layer

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- Number: US 11,898,243 B2
- Document ID: US11898243B2
- Status: Granted
- Kind: B2
- Application number: 17/113,301
- Filed: 2020-12-07
- Published: 2021-10-28
- Granted: 2024-02-13
- Earliest claimed: 2020-04-24
- Assignees: ASM IP Holding B.V.
- Applicants: ASM IP Holding B.V.
- Inventors: Pia Homm Jara; Werner Knaepen; Dieter Pierreux; Bert Jongbloed; Panagiota Arnou; Ren-Jie Chang; Qi Xie; Giuseppe Alessio Verni; Gido van der Star
- Web page: https://patentgrep.com/patent/US11898243B2

## CPC

- C23C 16/34: Nitrides {(C23C16/303 takes precedence)}
- H10P 14/432: {using selective deposition}
- C23C 16/0272: {Deposition of sub-layers, e.g. to promote the adhesion of the main coating}
- C23C 16/04: Coating on selected surface areas, e.g. using masks
- C23C 16/4408: {by purging residual gases from the reaction chamber or gas lines}
- C23C 16/45527: {characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations}
- C23C 16/4554: {Plasma being used non-continuously in between ALD reactions (C23C16/56 takes precedence)}
- C23C 16/45544: {characterized by the apparatus}
- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- C23C 16/56: After-treatment
- H10P 14/412: {Deposition of metallic or metal-silicide materials}
- H10P 14/418: {the conductive layers comprising transition metals}
- H10W 20/045: {for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.

## Claims

### Claim 1

A method of forming a vanadium nitride-containing layer, the method comprising
providing a substrate within a reaction chamber of a reactor;
depositing, via a first cyclical deposition process, a vanadium nitride-containing layer onto a surface of the substrate to form a seed layer,
wherein the first cyclical deposition process comprises:
providing a vanadium precursor to the reaction chamber; and
providing a nitrogen precursor to the reaction chamber; and
after the first cyclical deposition process, depositing, via a second cyclical deposition process, a titanium nitride layer onto the seed layer.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the reaction chamber is purged between providing the vanadium precursor to the reaction chamber and providing the nitrogen precursor to the reaction chamber.

### Claim 3 (depends on 1)

The method of claim 1, wherein the nitrogen precursor is selected from one or more of ammonia (NH3), hydrazine (N2H4), and other compounds comprising or consisting of nitrogen and hydrogen.

### Claim 4 (depends on 1)

The method of claim 1, wherein the nitrogen precursor does not include diatomic nitrogen.

### Claim 5 (depends on 1)

The method of claim 1, wherein the surface of the substrate comprises a first surface material and a second surface material, and wherein the first cyclical deposition process leads to a selectivity of deposition of the vanadium nitride-containing layer nitride containing layer selectively on the first surface material relative to the second surface material.

### Claim 6 (depends on 5)

The method of claim 5, wherein the selectivity of deposition is at least 80%.

### Claim 7 (depends on 5)

The method according to claim 5, wherein the selectivity of deposition is regulated through etch-back during the first cyclical deposition process.

### Claim 8 (depends on 5)

The method of claim 5, wherein the first surface material comprises metal, metallic, metal oxide or dielectric surface.

### Claim 9 (depends on 1)

The method of claim 1, wherein the second cyclical deposition process includes:
providing a TiCl4 precursor to the reaction chamber; and
providing an NH3 precursor to the reaction chamber.

### Claim 10 (depends on 1)

The method of claim 1, wherein a thickness of the seed layer is 0.6 nm or less.

### Claim 11 (depends on 1)

The method of claim 1, wherein the seed layer is non-continuous.

### Claim 12 (depends on 1)

The method of claim 1, wherein the first cyclical deposition process includes annealing in the presence of a silane compound.

### Claim 13 (depends on 12)

The method according to claim 12, wherein the silane compound is SiH4.

### Claim 14

A method of forming a structure, the method comprising
providing a substrate within a reaction chamber of a reactor; and
using a first cyclical deposition process, depositing a vanadium nitride-containing layer onto a surface of the substrate to form a seed layer,
wherein the first cyclical deposition process comprises:
providing a vanadium precursor to the reaction chamber; and
providing a nitrogen precursor to the reaction chamber; and
after the seed layer is formed from the first cyclical deposition process, using a second cyclical deposition process to deposit a titanium nitride layer onto the seed layer.