Semiconductor phosphor
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsSusumu Higuchi, Kenji Sakai, Masato Yamada, Masanobu Takahashi, Junya Ishizaki
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Abstract
A semiconductor phosphor configured to exhibit photoluminescence upon irradiation with excitation light, including: at least one active layer made of a compound semiconductor and containing an n-type or p-type dopant; and at least two barrier layers made of a compound semiconductor and having a larger band gap than the active layer. The active layer and the barrier layers are alternately stacked. This provides a semiconductor phosphor which allows easy wavelength adjustment, high efficiency and stability.
Claims6
A semiconductor phosphor configured to exhibit photoluminescence upon irradiation with excitation light, comprising:
- at least one active layer made of a compound semiconductor and containing an n-type or p-type dopant;
- and
- at least two barrier layers made of a compound semiconductor and having a larger band gap than the active layer, wherein
- the active layer and the barrier layers are alternately stacked.
Dependencies are inferred from the claim text.