# US 11,898,073 B2 · Semiconductor nanocrystal and preparation method thereof

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- Number: US 11,898,073 B2
- Document ID: US11898073B2
- Status: Granted
- Kind: B2
- Application number: 17/007,283
- Filed: 2020-08-31
- Published: 2020-12-24
- Granted: 2024-02-13
- Earliest claimed: 2009-07-08
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Eun-Joo Jang; Seok-Hwan Hong; Shin-Ae Jun; Hyo-Sook Jang
- Web page: https://patentgrep.com/patent/US11898073B2

## CPC

- C09K 11/025: {non-luminescent particle coatings or suspension media}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- B82Y 40/00: Manufacture or treatment of nanostructures
- C09K 11/565: {with zinc cadmium}
- C09K 11/70: containing phosphorus
- C09K 11/703: {with zinc or cadmium}
- H10D 62/118: {Nanostructure semiconductor bodies}
- H10D 62/121: {oriented parallel to substrates}
- H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots
- H10K 50/15: Hole transporting layers
- H10K 50/16: Electron transporting layers
- H10K 85/381: {Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc}
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H10H 20/8512: {Wavelength conversion materials}
- Y10S 977/774: Exhibiting three-dimensional carrier confinement, e.g. quantum dots
- Y10S 977/892: Liquid phase deposition
- Y10S 977/896: Chemical synthesis, e.g. chemical bonding or breaking
- Y10S 977/95: Electromagnetic energy
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal.

## Claims

### Claim 1

A method for preparing a semiconductor nanocrystal, comprising:
preparing a semiconductor nanocrystal solution comprising an organic solvent and a bare semiconductor nanocrystal; and
adding a polar solvent and a liquid that consists of water to the semiconductor nanocrystal solution to form a mixture, wherein the mixture does not include a mercapto spacer carbonic acid, and
wherein the bare semiconductor nanocrystal comprises a Group III-V semiconductor material and has an organic ligand bound thereto.

### Claim 2 (depends on 1)

The method of claim 1, wherein the organic ligand comprises a mercapto spacer thiol or a compound represented by Chemical Formula 1:
X—(R)n—Ym Chemical Formula 1
wherein, in Chemical Formula 1,
R is selected from a C1 to C30 alkylene group; a C6 to C30 arylene group; a C6 to C30 heteroarylene group; a C3 to C30 cycloalkylene group; a C3 to C30 heterocycloalkylene group; a C2 to C30 alkenylene group; a C2 to C30 alkynylene group; a C3 to C30 alicyclic group comprising a double bond or a triple bond in a ring; a C3 to C30 heterocycloalkylene group comprising a double bond or a triple bond in a ring; a C3 to C30 alicyclic group substituted with a C2 to C30 alkenyl group or C2 to C30 alkynyl group; or a C3 to C30 heterocycloalkylene group substituted with a C2 to C30 alkenyl group or a C2 to C30 alkynyl group,
n is an integer of 1 or more, and
X is selected from S, SH, P, P═O, PO3, NH, H2N, CN, NCO, O, a halogen, an acyl halide, COO, COOH, H, OH, or a combination thereof,
Y is H
m is an integer of at least 1,
wherein the mercapto spacer thiol selected from mercapto methyl thiol, mercapto ethyl thiol, mercapto propyl thiol, mercapto butyl thiol, and mercapto pentyl thiol.

### Claim 3 (depends on 1)

The method of claim 1, wherein the adding of the water is conducted without irradiating the bare semiconductor nanocrystal with light.

### Claim 4 (depends on 1)

The method of claim 1, wherein the bare semiconductor nanocrystal has a core-shell structure and the core of the bare semiconductor nanocrystal comprises the III-V compound.

### Claim 5 (depends on 1)

The method of claim 1, wherein a weight ratio of the water to the bare semiconductor nanocrystal is about 1:1 to about 100:1.

### Claim 6 (depends on 1)

The method of claim 1, wherein the water is added in an amount of about 0.01 parts by volume to about 100 parts by volume per about 100 parts by volume of the semiconductor nanocrystal solution.

### Claim 7 (depends on 1)

The method of claim 1, wherein a mixture of the polar solvent and the liquid is added to the semiconductor nanocrystal solution.

### Claim 8 (depends on 1)

The method of claim 1, wherein a volume ratio of the liquid to the polar solvent is from 1:about 0.1 to 1:about 10.

### Claim 9 (depends on 1)

The method of claim 1, wherein the preparing of the semiconductor nanocrystal solution and the adding of the water are performed under an inert gas atmosphere.

### Claim 10 (depends on 1)

The method of claim 1, wherein the organic solvent comprises an aromatic solvent, an alkane solvent, a non-polar solvent, a polar solvent, or a combination thereof.

### Claim 11

A method for preparing a semiconductor nanocrystal, comprising:
preparing a semiconductor nanocrystal solution comprising an organic solvent and a bare semiconductor nanocrystal; and
adding a polar solvent and a liquid that consists of water to the semiconductor nanocrystal solution to form a mixture, wherein the mixture does not include a mercapto spacer carbonic acid,
wherein the bare semiconductor nanocrystal comprises a Group III-V semiconductor material and has an organic ligand bound thereto, wherein the semiconductor nanocrystal has a luminous efficiency of about 50% or more.

### Claim 12 (depends on 11)

The method of claim 11, wherein the organic ligand comprises a mercapto spacer thiol or a compound represented by Chemical Formula 1:
X—(R)n—Ym Chemical Formula 1
wherein, in Chemical Formula 1,
R is selected from a C1 to C30 alkylene group; a C6 to C30 arylene group; a C6 to C30 heteroarylene group; a C3 to C30 cycloalkylene group; a C3 to C30 heterocycloalkylene group; a C2 to C30 alkenylene group; a C2 to C30 alkynylene group; a C3 to C30 alicyclic group comprising a double bond or a triple bond in a ring; a C3 to C30 heterocycloalkylene group comprising a double bond or a triple bond in a ring; a C3 to C30 alicyclic group substituted with a C2 to C30 alkenyl group or C2 to C30 alkynyl group; or a C3 to C30 heterocycloalkylene group substituted with a C2 to C30 alkenyl group or a C2 to C30 alkynyl group,
n is an integer of 1 or more, and
X is selected from S, SH, P, P═O, PO3, NH, H2N, CN, NCO, O, a halogen, an acyl halide, COO, COOH, H, OH, or a combination thereof,
Y is H
m is an integer of at least 1,
wherein the mercapto spacer thiol is selected from mercapto methyl thiol, mercapto ethyl thiol, mercapto propyl thiol, mercapto butyl thiol, and mercapto pentyl thiol.

### Claim 13 (depends on 11)

The method of claim 11, wherein the adding of the water is conducted without irradiating the bare semiconductor nanocrystal with light.

### Claim 14 (depends on 11)

The method of claim 11, wherein the bare semiconductor nanocrystal has a core-shell structure and the core of the bare semiconductor nanocrystal comprises the III-V compound.

### Claim 15 (depends on 11)

The method of claim 11, wherein a weight ratio of the water to the bare semiconductor nanocrystal is about 1:1 to about 100:1.

### Claim 16 (depends on 11)

The method of claim 11, wherein the water is added in an amount of about 0.01 parts by volume to about 100 parts by volume per about 100 parts by volume of the semiconductor nanocrystal solution.

### Claim 17 (depends on 11)

The method of claim 11, wherein a mixture of the polar solvent and the liquid is added to the semiconductor nanocrystal solution.

### Claim 18 (depends on 11)

The method of claim 11, wherein a volume ratio of the liquid to the polar compound is from 1:about 0.1 to 1:about 10.

### Claim 19 (depends on 11)

The method of claim 11, wherein the preparing of the semiconductor nanocrystal solution and the adding of the water are performed under an inert gas atmosphere.

### Claim 20 (depends on 11)

The method of claim 11, wherein the organic solvent comprises an aromatic solvent, an alkane solvent, a non-polar solvent, a polar solvent, or a combination thereof.

### Claim 21 (depends on 1)

The method of claim 1, wherein a water molecule is directly bound to the bare semiconductor nanocrystal by the addition of the water to the semiconductor nanocrystal solution.

### Claim 22 (depends on 11)

The method of claim 11, wherein a water molecule is directly bound to the bare semiconductor nanocrystal by the addition of the water to the semiconductor nanocrystal solution.

### Claim 23 (depends on 1)

The method of claim 1, wherein the mercapto spacer carbonic acid comprises mercapto acetic acid, mercapto propionic acid, mercapto butanoic acid, or mercapto hexanoic acid.

### Claim 24 (depends on 11)

The method of claim 11, wherein the mercapto spacer carbonic acid comprises mercapto acetic acid, mercapto propionic acid, mercapto butanoic acid, or mercapto hexanoic acid.

### Claim 25 (depends on 1)

The method of claim 1, wherein the semiconductor nanocrystal is configured to have a light emitting peak at a wavelength range of from about 510 nm to about 640 nm.

### Claim 26 (depends on 11)

The method of claim 11, wherein the semiconductor nanocrystal is configured to have a light emitting peak at a wavelength range of from about 510 nm to about 640 nm.

### Claim 27 (depends on 1)

The method of claim 1, further comprising maintaining the mixture for a predetermined time to increase a quantum efficiency of the bare semiconductor nanocrystal.

### Claim 28 (depends on 11)

The method of claim 11, further comprising maintaining the mixture for a predetermined time to increase a quantum efficiency of the bare semiconductor nanocrystal.

### Claim 29 (depends on 1)

The method of claim 1, wherein a volume ratio of the liquid to the polar solvent is from 1:about 0.5 to 1:about 5.

### Claim 30 (depends on 11)

The method of claim 11, wherein a volume ratio of the liquid to the polar solvent is from 1:about 0.5 to 1:about 5.