# US 11,897,759 B2 · Semiconductor device and method for forming the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,897,759 B2 - Document ID: US11897759B2 - Status: Granted - Kind: B2 - Application number: 17/838,023 - Filed: 2022-06-10 - Published: 2023-12-14 - Granted: 2024-02-13 - Earliest claimed: 2022-06-10 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company Ltd. - Inventors: Po Chen Yeh; Yi-Hsien Chang; Fu-Chun Huang; Ching-Hui Lin; Chiahung Liu; Shih-Fen Huang; Chun-Ren Cheng - Web page: https://patentgrep.com/patent/US11897759B2 ## CPC - B81B 7/007: {Interconnections between the MEMS and external electrical signals} - B81C 1/00246: {Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate} - B06B 1/0644: {using a single piezoelectric element (B06B1/0688 takes precedence)} - B81B 7/0006: {Interconnects} - B81C 1/00301: {Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias} - B06B 1/0292: {Electrostatic transducers, e.g. electret-type} - B81B 2201/0271: Resonators; ultrasonic resonators - B81B 2203/0127: Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function - B81B 2207/012: the micromechanical device and the control or processing electronics being separate parts in the same package - B81B 2207/015: the micromechanical device and the control or processing electronics being integrated on the same substrate - B81B 2207/053: of movable structures - B81B 2207/07: Interconnects - B81B 2207/097: Interconnects arranged on the substrate or the lid, and covered by the package seal - B81C 2203/0792: Forming interconnections between the electronic processing unit and the micromechanical structure - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) - B06B: METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, {e.g.} FOR PERFORMING MECHANICAL WORK IN GENERAL (for particular applications, see the relevant subclasses, e.g. B07B1/40, B23Q17/12, B24B31/06; measurement of mechanical vibrations G01H; in direction finding, locating, distance or velocity measuring G01S; {generating seismic energy G01V1/02}; control of mechanical vibrations in general G05D; sound-producing devices, e.g. bells, sirens, whistles G10K, {e.g. methods or devices for transmitting, conducting, or directing sound in general G10K11/00}; generation of electrical oscillations H03B; electromechanical resonators in general H03H; electromechanical transducers {for communication techniques, e.g. microphones, speakers} H04R) ## Abstract The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device. ## Claims ### Claim 1 A semiconductor device, comprising: a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device. ### Claim 2 (depends on 1) The semiconductor device of claim 1, further comprising a die attach film in contact with the conductive pillar, the first device and the second device, and separated from the RDL. ### Claim 3 (depends on 1) The semiconductor device of claim 1, wherein the first device includes an actuator aligned with the sensing area and a sensor surrounding the actuator. ### Claim 4 (depends on 1) The semiconductor device of claim 1, wherein the first device is a piezoelectric micromachined ultrasonic transducer (PMUT) or a capacitive micromachined ultrasonic transducer (CMUT). ### Claim 5 (depends on 1) The semiconductor device of claim 1, wherein the second device is an application specific integrated circuit (ASIC) die including a digital signal processing (DSP) chip, a driver or a decoder. ### Claim 6 (depends on 1) The semiconductor device of claim 1, wherein the first device includes a first conductive feature disposed thereon and facing the RDL, the second device includes a second conductive feature disposed thereon and facing the RDL. ### Claim 7 (depends on 6) The semiconductor device of claim 6, wherein the RDL includes: an isolation layer; and a plurality of conductive wires embedded in the isolation layer, wherein at least one of the plurality of conductive wires electrically connects the first conductive feature in the first device to the second conductive feature in the second device. ### Claim 8 A semiconductor device, comprising: a first PMUT device; a second PMUT device disposed adjacent to the first PMUT device; a molding surrounding the first PMUT device and the second PMUT device; and an RDL over the first PMUT device, the second PMUT device and the molding, wherein the RDL electrically connects the first PMUT device to the second PMUT device, and includes a first opening exposing a first sensing area of the first PMUT device and a second opening exposing a second sensing area of the second PMUT device. ### Claim 9 (depends on 8) The semiconductor device of claim 8, wherein the first PMUT device and the second PMUT device are separated by the molding. ### Claim 10 (depends on 8) The semiconductor device of claim 8, wherein the first sensing area and the second sensing area are separated by an isolation layer of the RDL. ### Claim 11 (depends on 10) The semiconductor device of claim 10, further comprising a conductive pillar adjacent to the first PMUT device or the second PMUT device, wherein the conductive pillar is surrounded by the molding and covered by the isolation layer. ### Claim 12 (depends on 8) The semiconductor device of claim 8, wherein each one of the plurality of first devices includes: a substrate; a membrane on the substrate, wherein a cavity is between the membrane and the substrate; a bottom electrode on the membrane; a top electrode over the bottom electrode; and a piezoelectric layer between the bottom electrode and the top electrode. ### Claim 13 (depends on 12) The semiconductor device of claim 12, wherein the bottom electrode includes a plurality of island electrodes, and the cavity is aligned with the plurality of island electrodes. ### Claim 14 (depends on 12) The semiconductor device of claim 12, wherein the cavity is disposed on a first side of the membrane, and the bottom electrode is disposed on a second side of the membrane opposite to the first side. ### Claim 15 (depends on 12) The semiconductor device of claim 12, wherein the membrane includes at least one film made of polycrystalline silicon, amorphous silicon, SiO2, Al2O3, Ta2O5, HfO2, Si3N4, Y2O3, ZrO2, TiO2 or La2O3. ### Claim 16 A semiconductor device, comprising: a first transducer device; a second transducer device separated from the first transducer device by a molding compound; and an RDL disposed over the first transducer device, the second transducer device and the molding compound, wherein the RDL includes: a first pillar electrically coupled to the first transducer device; a second pillar electrically coupled to the second transducer device; a wire electrically connecting the first pillar and the second pillar; and an isolation layer surrounding the first pillar, the second pillar and the wire. ### Claim 17 (depends on 16) The semiconductor device of claim 16, wherein the first transducer device or the second transducer device includes: a carrier; and a membrane disposed on the carrier, wherein a cavity is disposed between the membrane and the carrier. ### Claim 18 (depends on 16) The semiconductor device of claim 16, wherein the RDL further includes: a first opening penetrating the isolation layer and exposing a first sensing area of the first transducer device; and a second opening penetrating the isolation layer exposing a second sensing area of the second transducer device. ### Claim 19 (depends on 16) The semiconductor device of claim 16, further comprising a conductive pillar extending within the molding compound and disposed between the first transducer device and the second transducer device. ### Claim 20 (depends on 19) The semiconductor device of claim 19, wherein the first pillar, the second pillar or the wire is electrically coupled to the conductive pillar.