# US 11,897,082 B2 · Heterogeneous fluoropolymer mixture polishing pad

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- Number: US 11,897,082 B2
- Document ID: US11897082B2
- Status: Granted
- Kind: B2
- Application number: 17/472,610
- Filed: 2021-09-11
- Published: 2023-03-16
- Granted: 2024-02-13
- Earliest claimed: 2021-09-11
- Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Applicants: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Inventors: Matthew R. Gadinski; Joseph So
- Web page: https://patentgrep.com/patent/US11897082B2

## CPC

- B24B 37/24: characterised by the composition or properties of the pad materials
- C08G 18/12: using two or more compounds having active hydrogen in the first polymerisation step
- C08G 18/285: {Nitrogen containing compounds}
- C08G 18/4808: {Mixtures of two or more polyetherdiols}
- C08G 18/4854: {Polyethers containing oxyalkylene groups having four carbon atoms in the alkylene group}
- C08G 18/5015: {having fluorine atoms}
- C08G 18/724: {Combination of aromatic polyisocyanates with (cyclo)aliphatic polyisocyanates}
- C08G 18/758: {containing two or more cycloaliphatic rings}
- C08G 18/7621: {being toluene diisocyanate including isomer mixtures}
- C08G 73/1017: {in the form of (mono)amine}
- G03F 7/0046: {with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence)}
- H10P 52/403: {of conductive or resistive materials}
- H10P 95/062: {involving a dielectric removal step}
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. The polishing pad includes a polyurea polishing layer and a polyurea matrix. The polyurea matrix has a soft phase and a hard phase. The soft phase is formed from soft segments and the hard phase is formed from diisocyanate hard segments and a curative agent. The soft segment areva copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix is cured with the curative agent and includes gas or liquid-filled polymeric microelements. The soft segments form a fluorine rich phase that concentrates adjacent the polymeric microelements and at the polishing layer during polishing. The polishing layer remains hydrophilic during polishing in shear conditions.

## Claims

### Claim 1

A polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates comprising:
a polyurea polishing layer, the polyurea polishing layer including a polyurea matrix, the polyurea matrix having a soft phase and a hard phase, the soft phase being formed from soft segments and the hard phase being formed from diisocyanate hard segments and a curative agent, the soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons, the polyurea matrix being cured with the curative agent and including gas or liquid-filled polymeric microelements, the polymeric microelements having shell walls and a weight average diameter of less than 150 μm, the soft segments forming a fluorine depleted phase and a fluorine rich phase, wherein the fluorine rich phase concentrates adjacent the polymeric microelements and at the polishing layer during polishing wherein the polishing layer remains hydrophilic during polishing in shear conditions.

### Claim 2 (depends on 1)

The polishing pad of claim 1 wherein the fluorine rich phase produces regions of higher and lower fluorine concentration surrounding the polymeric microelements.

### Claim 3 (depends on 1)

The polishing pad of claim 1 wherein the fluorine rich phase adjacent the polymeric microelements has a thickness of less than fifty percent of an average diameter of the polymeric microelements.

### Claim 4 (depends on 1)

The polishing pad of claim 1 wherein the polishing layer has a polishing surface and wherein the polymeric microelements fracture under compression adjacent the polishing surface independent of diamond conditioning.

### Claim 5 (depends on 1)

The polishing pad of claim 1 wherein the polishing layer forms a surface containing denticle shaped structures during polishing.

### Claim 6

A polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates comprising:
a polyurea polishing layer, the polyurea polishing layer including a polyurea matrix, the polyurea matrix having a soft phase and a hard phase, the soft phase being formed from soft segments and the hard phase being formed from diisocyanate hard segments and a curative agent and wherein the hard phase is precipitated within the soft phase, the soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons, the polyurea matrix being cured with the curative agent and including gas or liquid-filled polymeric microelements, the polymeric microelements having shell walls and a weight average diameter of less than 150 μm, the soft segments forming a fluorine depleted phase and a fluorine rich phase, wherein the fluorine rich phase concentrates adjacent the polymeric microelements and at the polishing layer during polishing wherein the polishing layer remains hydrophilic during polishing in shear conditions.

### Claim 7 (depends on 6)

The polishing pad of claim 6 wherein the fluorine rich phase produces regions of higher and lower fluorine concentration surrounding the polymeric microelements.

### Claim 8 (depends on 6)

The polishing pad of claim 6 wherein the fluorine rich phase adjacent the polymeric microelements has a thickness of less than fifty percent of an average diameter of the polymeric microelements.

### Claim 9 (depends on 6)

The polishing pad of claim 6 wherein the polishing layer has a polishing surface and wherein the polymeric microelements fracture under compression adjacent the polishing surface independent of diamond conditioning.

### Claim 10 (depends on 6)

The polishing pad of claim 6 wherein the polishing layer forms a surface containing denticle-shaped structures during polishing.