# US 11,897,077 B2 · Semiconductor manufacturing apparatus

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- Number: US 11,897,077 B2
- Document ID: US11897077B2
- Status: Granted
- Kind: B2
- Application number: 17/183,947
- Filed: 2021-02-24
- Published: 2021-09-16
- Granted: 2024-02-13
- Earliest claimed: 2020-03-10
- Assignees: Kioxia Corporation
- Applicants: Kioxia Corporation
- Inventors: Tsutomu Miki
- Web page: https://patentgrep.com/patent/US11897077B2

## CPC

- B24B 37/005: Control means for lapping machines or devices
- H10P 70/277: {the processing being a planarisation of conductive layers}
- H10P 74/238: {comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement}
- H10P 95/064: {the removal being chemical etching}
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor manufacturing apparatus includes a first top ring that is rotatable and configured to hold a wafer, a first turntable that is rotatable and has a polishing pad for performing polishing of a film formed on the wafer, a sound measuring unit (sensor) that measures a first sound generated during the polishing, and a first calculation unit (controller) that calculates a polishing amount of the film based on a first sound pressure of the first sound, a polishing amount per unit time of the polishing, and a time of the polishing.

## Claims

### Claim 1

A semiconductor manufacturing apparatus comprising:
a rotatable first top ring configured to hold a wafer having a film;
a rotatable first turntable having a polishing pad arranged to perform polishing of the film;
a sound sensor configured to measure a first sound generated during the polishing; and
a controller configured to calculate a polishing amount of the film based on (i) a first sound pressure of the first sound, (ii) a polishing amount per unit time of the polishing, and (iii) an elapsed time of the polishing, wherein a prediction value of the polishing amount is determined based on the first sound pressure during polishing, a second sound pressure before polishing, and the polishing amount per unit time according to Equation (2),
Prediction
⁢
value
⁢
of
⁢
polishing
⁢
amount
=
∑
t
=
1
n
(
∫
f
⁢
1
f
2
(
Sound
⁢
pressure
⁢
during
⁢
polishing
-
Sound
⁢
pressure
⁢
before
⁢
polishing
)
×
Polishing
⁢
amount
⁢
per
⁢
unit
⁢
time
)
(
2
)

### Claim 2 (depends on 1)

The semiconductor manufacturing apparatus according to claim 1,
wherein the polishing amount per unit time is predetermined for a plurality of materials to be polished.

### Claim 3 (depends on 1)

The semiconductor manufacturing apparatus according to claim 1, further comprising:
a first memory that stores the polishing amount per unit time.

### Claim 4 (depends on 1)

The semiconductor manufacturing apparatus according to claim 1, wherein the controller is configured to control the polishing based on the polishing amount of the film and a target polishing amount.

### Claim 5 (depends on 4)

The semiconductor manufacturing apparatus according to claim 4,
wherein the target polishing amount is predetermined for a plurality of materials to be polished.

### Claim 6 (depends on 4)

The semiconductor manufacturing apparatus according to claim 4, further comprising:
a second memory that stores the target polishing amount.

### Claim 7 (depends on 1)

The semiconductor manufacturing apparatus according to claim 1, wherein the controller is configured to calculate the first sound pressure of the first sound.

### Claim 8 (depends on 1)

The semiconductor manufacturing apparatus according to claim 1,
wherein the controller is configured to
provide a regression model for predicting the first sound pressure,
calculate a first sound prediction value using the regression model, and
calculate the polishing amount of the film based on the first sound pressure prediction value.

### Claim 9 (depends on 8)

The semiconductor manufacturing apparatus according to claim 8,
wherein the controller is further configured to:
calculate a correction coefficient based on the regression model, and
calculate the first sound pressure prediction value based on the first sound pressure and the correction coefficient.

### Claim 10 (depends on 1)

The semiconductor manufacturing apparatus according to claim 1,
wherein the second sound pressure includes a third sound pressure of a third sound generated from the first top ring and a fourth sound pressure of a fourth sound generated from the first turntable.

### Claim 11 (depends on 1)

The semiconductor manufacturing apparatus according to claim 1,
wherein the controller is configured to calculate the polishing amount of the film by using a fifth sound pressure which is a difference between the first sound pressure and the second sound pressure.

### Claim 12 (depends on 1)

The semiconductor manufacturing apparatus according to claim 1,
wherein the sound sensor is configured to measure a sixth sound falling within a frequency bandwidth of 20 kHz or higher and 100 kHz or lower.

### Claim 13 (depends on 12)

The semiconductor manufacturing apparatus according to claim 12,
wherein the sound sensor is configured to measure a seventh sound falling within a frequency bandwidth of 20 kHz or higher and 70 kHz or lower.

### Claim 14 (depends on 13)

The semiconductor manufacturing apparatus according to claim 13,
wherein the sound sensor is configured to measure an eighth sound falling within a frequency bandwidth of 20 kHz or higher and 50 kHz or lower.

### Claim 15 (depends on 12)

The semiconductor manufacturing apparatus according to claim 12,
wherein the sound sensor is configured to measure a ninth sound falling within a frequency bandwidth of 20 kHz or higher and 100 kHz or lower and a tenth sound falling within a frequency bandwidth of 10 Hz or higher and less than 20 kHz, and
the controller is configured to control the polishing based on a second polishing amount of the film calculated based on a ninth sound pressure of the ninth sound, and a third polishing amount of the film calculated based on a tenth sound pressure of the tenth sound.

### Claim 16 (depends on 1)

The semiconductor manufacturing apparatus according to claim 1, further comprising:
a second rotatable top ring; and
a second rotatable turntable,
wherein the second sound pressure further includes an eleventh sound pressure of an eleventh sound generated from the second top ring and a twelfth sound pressure of a twelfth sound generated from the second turntable.

### Claim 17 (depends on 1)

The semiconductor manufacturing apparatus according to claim 1, further comprising:
a robotic hand configured to move the wafer to the first top ring; and
a cleaner configured to clean the wafer,
wherein the second sound pressure further includes a thirteenth sound pressure of a thirteenth sound generated from the robotic hand and a fourteenth sound pressure of a fourteenth sound generated from the cleaner.

### Claim 18 (depends on 1)

The semiconductor manufacturing apparatus according to claim 1, further comprising:
a robotic hand configured to move the wafer to the first top ring; and
a cleaner configured to clean the wafer.
