# US 11,896,344 B2 · Hybrid matching network topology > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,896,344 B2 - Document ID: US11896344B2 - Status: Granted - Kind: B2 - Application number: 18/176,752 - Filed: 2023-03-01 - Published: 2023-06-29 - Granted: 2024-02-13 - Earliest claimed: 2019-07-09 - Assignees: Comet Technologies USA, Inc. - Applicants: Comet Technologies USA, Inc. - Inventors: Anthony Oliveti; Tigran Poghosyan - Web page: https://patentgrep.com/patent/US11896344B2 ## CPC - A61B 5/0075: {by spectroscopy, i.e. measuring spectra, e.g. Raman spectroscopy, infrared absorption spectroscopy (A61B5/0071 takes precedence)} - A61B 5/0036: {including treatment, e.g., using an implantable medical device, ablating, ventilating} - A61B 5/0068: {Confocal scanning} - A61B 5/444: {Evaluating skin marks, e.g. mole, nevi, tumour, scar} - A61B 18/22: the beam being directed along or through a flexible conduit, e.g. an optical fibre; {Couplings or} hand-pieces therefor - A61B 34/32: operating autonomously - G16H 20/40: relating to mechanical, radiation or invasive therapies, e.g. surgery, laser therapy, dialysis or acupuncture - H01J 37/32183: {Matching circuits} - H01J 37/32935: {Monitoring and controlling tubes by information coming from the object and/or discharge} - A61B 2017/00761: {Removing layer of skin tissue, e.g. wrinkles, scars or cancerous tissue} - A61B 2018/00577: {Ablation} - A61B 2018/00642: {with feedback, i.e. closed loop control} - A61B 2018/20355: {Special scanning path or conditions, e.g. spiral, raster or providing spot overlap} - A61B: DIAGNOSIS; SURGERY; IDENTIFICATION (usefulness limited to only animals A61D) - G16H: HEALTHCARE INFORMATICS, i.e. INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR THE HANDLING OR PROCESSING OF MEDICAL OR HEALTHCARE DATA - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract The present disclosure relates to plasma generation systems which utilize plasma for semiconductor processing. The plasma generation system disclosed herein employs a hybrid matching network. The plasma generation system includes a RF generator and a matching network. The matching network includes a first-stage to perform low-Q impedance transformations during high-speed variations in impedance. The matching network includes a second-stage to perform impedance matching for high-Q impedance transformations. The matching network further includes a sensor coupled to the first-stage and the second-stage to calculate the signals that are used to engage the first and second-stages. The matching network includes a first-stage network that is agile enough to tune each state in a modulated RF waveform and a second-stage network to tune a single state in a RF modulated waveform. The plasma generation system also includes a plasma chamber coupled to the matching network. ## Claims ### Claim 1 A hybrid matching network, comprising: a first-stage matching network comprising a plurality of electronically controlled electronic capacitors coupled to a radio frequency generator and a plasma chamber; a second-stage matching network comprising a mechanically tuned capacitor coupled to the radio frequency generator and the plasma chamber operating within a control loop bandwidth; a controller operating the first-stage matching network faster than the control loop bandwidth of the second-stage matching network. ### Claim 2 (depends on 1) The hybrid matching network of claim 1, wherein the mechanically tuned capacitor comprises a vacuum capacitor. ### Claim 3 (depends on 1) The hybrid matching network of claim 1, wherein first-stage matching network performs relatively low-Q impedance transformations, the second-stage matching network performs relatively high-Q impedance transformations, and the Q represents a ratio between a reactance and a resistance of an associated impedance transformation. ### Claim 4 (depends on 3) The hybrid matching network of claim 3, wherein the relatively low-Q impedance transformations have a Q less than 2, and the relatively high-Q impedance transformations have a Q greater than 2. ### Claim 5 (depends on 1) The hybrid matching network of claim 1, wherein the first-stage matching network further comprises: an impedance transformer connected in series between the RF generator and the plasma chamber; a plurality of shunt banks connected between the impedance transformer and electric ground; wherein each shunt bank comprises at least one of the electronically controlled electronic capacitors. ### Claim 6 (depends on 1) The hybrid matching network of claim 1, wherein the first-stage matching network further comprises: an impedance transformer connected in series between the RF generator and the plasma chamber comprising an input node between the RF and the impedance transformer, and an output node between the impedance transformer and the plasma chamber; a plurality of input-side shunt banks connected between the input node of the impedance transformer and electric ground, wherein each input-side shunt bank comprises at least one of the electronically controlled electronic capacitors; a plurality of output-side shunt banks connected between the output node of the impedance transformer and electric ground, wherein each output-side shunt bank comprises at least one of the electronically controlled electronic capacitors. ### Claim 7 (depends on 1) The hybrid matching network of claim 1, wherein the second-stage matching network further comprises: an inductor connected in series between the RF generator and the plasma chamber; a series-connected mechanically tuned capacitor connected in series with the inductor. ### Claim 8 (depends on 1) The hybrid matching network of claim 1, wherein the second-stage matching network further comprises: an inductor connected in series between the RF generator and the plasma chamber; a shunt-connected mechanically tuned capacitor connected between the inductor and electric ground. ### Claim 9 (depends on 1) The hybrid matching network of claim 1, wherein the second-stage matching network further comprises: an inductor connected in series between the RF generator and the plasma chamber; a series-connected mechanically tuned capacitor connected in series with the inductor; a shunt-connected mechanically tuned capacitor connected between the inductor and electric ground. ### Claim 10 (depends on 1) The hybrid matching network of claim 1, wherein the first-stage matching network includes a continuously variable reactive tuning element. ### Claim 11 (depends on 1) The hybrid matching network of claim 1, further comprising: a sensor element measuring voltage and current and calculating a relationship between the measured voltage and current in both phase, magnitude, and impedance; wherein the controller utilizes the relationship between the measured voltage and current in both phase, magnitude, and impedance to operate the first-stage matching network faster than the control loop bandwidth of the second-stage matching network. ### Claim 12 (depends on 1) The hybrid matching network of claim 1, wherein the sensor element operates the controller operating the electronically controlled electronic capacitors. ### Claim 13 (depends on 1) The hybrid matching network of claim 1, wherein the impedance transformer includes a lumped-element pi-network. ### Claim 14 (depends on 1) The hybrid matching network of claim 1 wherein the impedance transformer includes a lumped-element pi-network with a first half of the electronically controlled electronic capacitors disposed on the first side of the pi-network and a second half of the electronically controlled electronic capacitors disposed on the second side of the pi-network. ### Claim 15 (depends on 1) The hybrid matching network of claim 1, wherein a tunable range of the first-stage matching network can be modified by disabling at least one of the electronically controlled electronic capacitors. ### Claim 16 (depends on 1) The hybrid matching network of claim 1, wherein the first-stage matching network and the second-stage matching network perform impedance matching on a same part of a modulated RF waveform. ### Claim 17 (depends on 1) The hybrid matching network of claim 1, wherein the first-stage matching network and the second-stage matching network perform impedance matching on different parts of a modulated RF waveform. ### Claim 18 (depends on 1) The hybrid matching network of claim 1, wherein: the first-stage matching network comprises a plurality of fixed capacitors, and an electronic switch controlling each fixed capacitor selected from the group consisting of PIN diodes, silicon-carbide field effect transistors (SiCFETs), metal oxide field effect transistors (MOSFETs), insulated gate bipolar transistors (IGBTs), and bipolar junction transistors (BJTs); and the second-stage matching network comprises motor controlling the vacuum variable capacitor or air variable capacitor selected from the group consisting of a stepper motor, a brushed direct current (DC) motor, a brushless DC motor, and an AC motor. ### Claim 19 (depends on 18) The hybrid matching network of claim 18, wherein first-stage matching network performs relatively low-Q impedance transformations, the second-stage matching network performs relatively high-Q impedance transformations, and the Q represents a ratio between a reactance and a resistance of an associated impedance transformation. ### Claim 20 (depends on 19) The hybrid matching network of claim 19, wherein the mechanically tuned capacitor comprises a vacuum capacitor.