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US 11,895,934 B2Granted
Phase change memory with heater
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Chanro Park, Julien Frougier, Ruilong Xie
Life of this patent
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Abstract
A phase change memory (PCM) structure including a bottom electrode, a first dielectric spacer disposed above and in contact with the bottom electrode, the first dielectric spacer comprising a vertical seam, a PCM layer disposed above the first dielectric spacer, and a heater element disposed in the seam and in contact with the bottom electrode.
Claims9
A phase change memory (PCM) structure comprising:
- a bottom electrode;
- a first dielectric spacer disposed above and in contact with the bottom electrode, the first dielectric spacer comprising a vertical seam;
- a second dielectric spacer disposed surrounding the first dielectric spacer and between the bottom electrode and the PCM layer;
- a third dielectric spacer disposed between the bottom electrode and the PCM layer, the third dielectric spacer surrounding the second dielectric spacer;
- a PCM layer disposed above the first dielectric spacer;
- and
- a heater element disposed in the seam and in contact with the bottom electrode.
4 more elements
A phase change memory (PCM) structure comprising:
- a bottom electrode disposed upon a substrate, the bottom electrode comprising a filament reservoir;
- a first dielectric spacer disposed above the filament reservoir, the first dielectric spacer comprising a vertical seam in contact with the filament reservoir;
- a second dielectric spacer disposed surrounding the first dielectric spacer and between the bottom electrode and the PCM layer;
- a third dielectric spacer disposed between the bottom electrode and the PCM layer, the third dielectric spacer surrounding the second dielectric spacer;
- a filament disposed in the seam;
- and
- a PCM layer disposed above the filament.
4 more elements
Dependencies are inferred from the claim text.