Magnetoresistive random access memory and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsHui-Lin Wang, Po-Kai Hsu, Ju-Chun Fan, Ching-Hua Hsu, Yi-Yu Lin, Hung-Yueh Chen
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Abstract
A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.
Claims9
A semiconductor device, comprising:
- a magnetic tunneling junction (MTJ) on a substrate;
- a top electrode on the MTJ;
- a protective cap on and directly contacting all of a top surface of the top electrode, wherein the protective cap is made of conductive material;
- and
- a metal interconnection on and directly contacting the protective cap.
A semiconductor device, comprising:
- a magnetic tunneling junction (MTJ) on a substrate;
- a top electrode on the MTJ;
- a spacer adjacent to the MTJ and the MTJ and the top electrode;
- and
- a protective cap on the top electrode and the spacer, wherein the protective cap directly contacts a sidewall of the spacer and a bottom surface of the protective cap is aligned with a bottom surface of the spacer.
Dependencies are inferred from the claim text.