Layout pattern for magnetoresistive random access memory

A layout pattern for magnetoresistive random access memory (MRAM), comprising:

• a substrate having a first active region, a second active region, and a word line connecting region between the first active region and the second active region;
• a first gate pattern extending along a first direction from the first active region to the second active region;
• a second gate pattern extending along the first direction from the first active region to the second active region;
• a first magnetic tunneling junction (MTJ) between the first gate pattern and the second pattern and within the word line connecting region, wherein the first MTJ comprises a dummy MTJ;
• a second MTJ between the first gate pattern and the second gate pattern in the first active region, wherein top surfaces of the first MTJ and the second MTJ are coplanar;
• and
• a first diffusion region and a second diffusion region extending along a second direction and adjacent to the first gate pattern and the second gate pattern in the word line connecting region, wherein the first MTJ is between and not overlapping the first diffusion region and the second diffusion region.