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US 11,895,847 B2Granted
Magnetoresistive random access memory
AssigneeUnited Microelectronics Corp.
InventorsTing-Hsiang Huang, Yi-Chung Sheng, Sheng-Yuan Hsueh, Kuo-Hsing Lee, Chih-Kai Kang
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Abstract
A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle and a top view of the first metal interconnection includes an ellipse overlapping the circle.
Claims7
A semiconductor device, comprising:
- a substrate having a magnetic tunneling junction (MTJ) region and a logic region;
- a magnetic tunneling junction (MTJ) on the MTJ region, wherein a top view of the MTJ comprises a circle;
- and
- a first metal interconnection on the MTJ, wherein a top view of the first metal interconnection comprises an ellipse overlapping the circle and the circle contacts the ellipse directly.
1 more element
Dependencies are inferred from the claim text.