Semiconductor storage device and method of manufacturing semiconductor storage device
AssigneeKioxia Corporation
InventorHideto Takekida
Life of this patent
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Abstract
A semiconductor storage device includes a stack, a channel layer, a first charge storage portion, and a second charge storage portion. The stack includes a plurality of conductive layers and a plurality of insulating layers, and the plurality of conductive layers and the plurality of insulating layers are alternately stacked one by one in a first direction. The channel layer extends in the first direction in the stack. The first charge storage portion is provided between the channel layer and each of the plurality of conductive layers in a second direction intersecting with the first direction. The second charge storage portion includes a portion interposed between two adjacent conductive layers in the plurality of conductive layers in the first direction.
Claims18
A semiconductor storage device comprising:
- a stack including a plurality of conductive layers and a plurality of insulating layers, the plurality of conductive layers and the plurality of insulating layers being alternately stacked one by one in a first direction;
- a channel layer extending in the first direction in the stack;
- a first charge storage portion disposed between the channel layer and each of the plurality of conductive layers, in a second direction intersecting with the first direction;
- and
- a second charge storage portion including a portion, the portion interposed between two adjacent conductive layers in the plurality of conductive layers in the first direction.
Dependencies are inferred from the claim text.