Back to results
US 11,895,830 B2Granted
Method for manufacturing semiconductor device
AssigneeNanya Technology Corporation
InventorChuan-Lin Hsiao
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a method for manufacturing a semiconductor device having a buried wordline. The method includes forming a first recessed portion in a first dielectric layer in a substrate; forming a second recessed portion spaced apart from the first recessed portion and in the substrate; disposing a protection layer on the substrate to cover the second recessed portion; and disposing a second dielectric layer on the first dielectric layer.
Claims17
A method of manufacturing a semiconductor device, comprising:
- forming a first recessed portion in a first dielectric layer in a substrate;
- forming a second recessed portion spaced apart from the first recessed portion and in the substrate;
- disposing a protection layer on the substrate to cover the second recessed portion;
- and
- disposing a second dielectric layer on the first dielectric layer.
2 more elements
Dependencies are inferred from the claim text.