Semiconductor memory device
AssigneeSK hynix Inc.
InventorsJae Man Yoon, Jin Hwan Jeon, Tae Kyun Kim, Jung Woo Park, Su Ock Chung, Jae Won Ha
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Abstract
A semiconductor device and a method of fabricating the same are provided. According to the present invention, a semiconductor device comprises an active region formed in a substrate, and including flat surfaces and hole-shaped recess portions; upper-level plugs disposed over the flat surfaces; a spacer disposed between the upper-level plugs and providing a trench exposing the hole-shaped recess portions; a lower-level plug filling the hole-shaped recess portions; and a buried conductive line disposed over the lower-level plug and partially filling the trench.
Claims21
A semiconductor device comprising:
- an active region formed in a substrate, the active region including flat surfaces and hole-shaped recess portions;
- upper-level plugs disposed over the flat surfaces;
- a spacer disposed between the upper-level plugs, the spacer including a trench exposing the hole-shaped recess portions;
- a lower-level plug filling the hole-shaped recess portions;
- and
- a buried conductive line disposed over the lower-level plug and partially filling the trench.
A semiconductor device comprising:
- an active region formed in a substrate, the active region including flat surfaces and hole-shaped recess portions;
- a gate trench formed in the active region between the hole-shaped recess portions and the flat surfaces;
- a buried word line partially filling the gate trench;
- upper-level plugs disposed over the flat surfaces;
- a spacer disposed between the upper-level plugs, the spacer including a trench exposing the hole-shaped recess portions;
- a lower-level plug filling the hole-shaped recess portions;
- and
- a buried bit line disposed over the lower-level plug and partially filling the trench.
Dependencies are inferred from the claim text.