Semiconductor device with capacitor contact surrounded by conductive ring and manufacturing method of the semiconductor device
AssigneeWinbond Electronics Corp.
InventorNoriaki Ikeda
Life of this patent
Estimating the term…
Abstract
A semiconductor device and a manufacturing method are provided. The semiconductor device includes an active region, a bit line, a capacitor contact, a conductive ring and a storage capacitor. The active region is formed in a substrate. The bit line and the capacitor contact are disposed over the substrate and electrically connected with the active region. The bit line is laterally separated from the capacitor contact, and a top surface of the bit line is lower than a top surface of the capacitor contact. An upper portion of the capacitor contact is surrounded by the conductive ring. The storage capacitor is disposed over and in electrical contact with the capacitor contact and the conductive ring.
Claims18
A manufacturing method of a semiconductor device, comprising:
- forming an active region in a substrate;
- forming a bit line and a capacitor contact over the substrate, wherein the bit line is laterally separated from the capacitor contact, the bit line and the capacitor contact are electrically connected with the active region, and a top surface of the bit line is lower than a topmost surface of the capacitor contact;
- forming a conductive ring surrounding an upper portion of the capacitor contact;
- and
- forming a storage capacitor over the capacitor contact and the conductive ring,
- wherein a topmost surface of the conductive ring is substantially coplanar with the topmost surface of the capacitor contact.
A manufacturing method of a semiconductor device, comprising:
- forming capacitor contacts over a substrate, wherein the capacitor contacts are arranged as an array having rows and columns;
- forming bit lines over the substrate, wherein each of the bit lines extends between adjacent columns of the capacitor contacts, and the bit lines are formed to a height lower than a height to which the capacitor contacts are formed;
- forming conductive rings each laterally enclosing a top portion of one of the capacitor contacts, wherein the bit lines are overlapped with the conductive rings and vertically separated from the conductive rings;
- and
- forming storage capacitors over the substrate, wherein the storage capacitors are landed on the capacitor contacts and the conductive rings,
- wherein the capacitor contacts are formed in an isolation structure, and the bit lines are separated from the capacitor contacts by portions of the isolation structure surrounding bottom portions of the capacitor contacts.
Dependencies are inferred from the claim text.