Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorShinji Sakai
Life of this patent
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Abstract
A semiconductor device includes: first and second power transistors connected in parallel with each other and having different saturated currents; and a gate driver driving the first and second power transistors with individual gate voltages, respectively, the gate driver includes a drive circuit receiving an input signal and outputting a drive signal, a first amplifier amplifying the drive signal in accordance with first power voltage and supplying the amplified drive signal to a gate of the first power transistor, and a second amplifier amplifying the drive signal in accordance with second power voltage different from the first power voltage and supplying the amplified drive signal to a gate of the second power transistor.
Claims12
A semiconductor device comprising:
- first and second power transistors connected in parallel with each other and having different saturated currents;
- and
- a gate driver driving the first and second power transistors with individual gate voltages, respectively,
- the gate driver includes
- a drive circuit receiving an input signal and outputting a drive signal,
- a first amplifier amplifying the drive signal in accordance with first power voltage to supply a first amplified drive signal to a gate of the first power transistor, and
- a second amplifier amplifying the drive signal in accordance with second power voltage different from the first power voltage to supply a second amplified drive signal to a gate of the second power transistor.
Dependencies are inferred from the claim text.