Three-dimensional porous silicon/carbon composite material, method for preparing same, and use thereof
AssigneeGuangdong Kaijin New Energy Technology Co., Ltd.
InventorsAnhua Zheng, Dexin Yu, Yongjun Yang
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Abstract
A three-dimensional porous silicon/carbon composite material includes a three-dimensional porous skeleton, a filler layer, and a coating layer. The three-dimensional porous skeleton is a three-dimensional porous carbon skeleton; the filler layer includes silicon particles and conductive carbon; the filler layer is formed by scattering the silicon particles evenly and dispersively in the conductive carbon; and the coating layer is a carbon coating layer. The present invention provides the three-dimensional porous silicon/carbon composite material with long cycle and low expansion, a method for preparing the same, and a use thereof.
Claims8
A three-dimensional porous silicon/carbon composite material, comprising a three-dimensional porous skeleton, a filler layer, and a coating layer, wherein the three-dimensional porous skeleton is a three-dimensional porous carbon skeleton, the filler layer comprises silicon particles and conductive carbon, the filler layer is formed by scattering the silicon particles evenly and dispersively in the conductive carbon, and the coating layer is a carbon coating layer;
- wherein the three-dimensional porous silicon/carbon composite material is prepared by:
- preparing the three-dimensional porous carbon skeleton;
- placing the three-dimensional porous carbon skeleton in a reactor, and depositing silicon particles and conductive carbon in the three-dimensional porous carbon skeleton by alternate vapor deposition in a protective atmosphere at a rate of 0.5-20 L/min to obtain a precursor A of the silicon-carbon composite material, wherein the alternate vapor deposition is performed at a temperature of 400-1000° C. for a duration of 0.5-20 h;
- performing carbon coating on the precursor A of the silicon/carbon composite material to prepare a precursor B of the silicon/carbon composite material;
- and
- sintering the precursor B of the silicon/carbon composite material to prepare the three-dimensional porous silicon/carbon composite material;
- wherein the alternate vapor deposition comprises:
- mixing a silicon source with the protective atmosphere at a ratio B and introducing a resultant mixture into a reactor for 5-600 seconds for vapor deposition of nano-silicon;
- and
- mixing an organic carbon source with the protective atmosphere at a ratio C and introducing another resultant mixture into the reactor for 5-600 seconds for vapor deposition of the conductive carbon;
- wherein constant alternate introduction is accomplished by a solenoid valve, the ratio B comprises a flow ratio of 1:1-1:20 between the silicon particles to the protective atmosphere, and the ratio C comprises a flow ratio of 1:1-1:20 between the organic carbon source and the protective atmosphere.
A method for preparing a three-dimensional porous silicon/carbon composite material, comprising:
- preparing a three-dimensional porous carbon skeleton M;
- placing the three-dimensional porous carbon skeleton M in a reactor, and depositing silicon particles and conductive carbon in the three-dimensional porous carbon skeleton M by alternate vapor deposition in a protective atmosphere at a rate of 0.5-20 L/min to obtain a precursor A of the silicon-carbon composite material, wherein the alternate vapor deposition is performed at a temperature of 400-1000° C. for a duration of 0.5-20 h;
- performing carbon coating on the precursor A of the silicon/carbon composite material to prepare a precursor B of the silicon/carbon composite material;
- and
- sintering the precursor B of the silicon/carbon composite material to prepare the three-dimensional porous silicon/carbon composite material;
- wherein the alternate vapor deposition comprises:
- mixing a silicon source with the protective atmosphere at a ratio B and introducing a resultant mixture into a reactor for 5-600 seconds for vapor deposition of nano-silicon;
- and
- mixing an organic carbon source with the protective atmosphere at a ratio C and introducing another resultant mixture into the reactor for 5-600 seconds for vapor deposition of the conductive carbon;
- wherein constant alternate introduction is accomplished by a solenoid valve, the ratio B comprises a flow ratio of 1:1-1:20 between the silicon particles to the protective atmosphere, and the ratio C comprises a flow ratio of 1:1-1:20 between the organic carbon source and the protective atmosphere.
Dependencies are inferred from the claim text.