Radiation-emitting semiconductor chip and a method for producing a radiation-emitting semiconductor chip
AssigneeOSRAM OLED GmbH
InventorsKorbinian Perzlmaier, Stefan Illek
Life of this patent
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Abstract
A radiation-emitting semiconductor chip may include a semiconductor body, a reflector, at least one cavity, and a seal. The semiconductor body may include an active region configured to generate electronic radiation. The reflector may be configured to reflect a portion of the electromagnetic radiation. The cavity may be filled with a material having a refractive index not exceeding 1.1. The seal may be impermeable to the material. The cavity may be arranged between the reflector and the semiconductor body, and the seal may cover the underside of the reflector.
Claims19
A radiation-emitting semiconductor chip comprising:
- a semiconductor body comprising an active region configured to generate electromagnetic radiation;
- a reflector configured to reflect a portion of the electromagnetic radiation;
- wherein the semiconductor body extends beyond the reflector in a lateral direction;
- at least one cavity;
- a supporting layer arranged on an underside of the reflector facing away from the semiconductor body;
- wherein the supporting layer comprises a top side, a bottom side opposite the top side, and two sidewalls adjacent to the top side and the bottom side;
- wherein the top side faces the underside of the reflector;
- at least one support arranged between the reflector and the semiconductor body;
- wherein the at least one support is a metal material or a transparent conductive oxide;
- and wherein when the at least one support is a metal material, then the reflector has the same material as the at least one support;
- and
- a seal impermeable to the material;
- wherein the at least one cavity is arranged between the reflector and the semiconductor body, wherein the seal covers the underside of the reflector, wherein the seal contacts a portion of the semiconductor body that extends beyond the reflector in the lateral direction;
- and wherein the seal laterally surrounds the supporting layer and at least partially covers at least one side wall of the supporting layer,
- wherein the at least one support imparts the at least one cavity as a singular gap absent of solid material and located between the semiconductor body and the reflector, and wherein the support comprises columns or posts situated within the singular gap.
A method for producing a radiation-emitting semiconductor chip,
- wherein the method comprises:
- providing a semiconductor wafer comprising a plurality of semiconductor bodies;
- applying a structured sacrificial layer on an underside of the semiconductor wafer;
- producing a plurality of openings in the sacrificial layer;
- filling the plurality of openings with a support material that is a metal material or a transparent conductive oxide to form supports;
- applying a reflector layer on an outer side of the sacrificial layer and an outer side of the support material facing away from the semiconductor wafer;
- wherein the semiconductor wafer extends beyond the reflector layer in a lateral direction;
- wherein at least one cavity is arranged between the reflector and the semiconductor body;
- wherein when the at least one support of the supports is a metal material, then the reflector has the same material as the support material;
- removing the sacrificial layer;
- applying a supporting layer on an underside of the reflector facing away from the semiconductor body;
- wherein the supporting layer comprises a top side, a bottom side opposite the top side, and two sidewalls adjacent to the top side and the bottom side;
- wherein the top side faces the underside of the reflector;
- applying a sealing layer on an outer side facing away from the semiconductor wafer, wherein the sealing layer is impermeable to the support material;
- wherein the sealing layer contacts a portion of the semiconductor wafer that extends beyond the reflector layer in the lateral direction;
- wherein the seal laterally surrounds the supporting layer and at least partially covers at least one side wall of the supporting layer;
- and
- separating a plurality of semiconductor chips,
- wherein the at least one support imparts the at least one cavity as a singular gap absent of solid material and located between the semiconductor body and the reflector, and wherein the support comprises columns or posts situated within the singular gap.
Dependencies are inferred from the claim text.