Electrical device with stress buffer layer and stress compensation layer

An electrical device comprising:

• a substrate;
• a temperature-sensitive material supported by the substrate, the temperature-sensitive material having a thermal degradation temperature in a range from 50° C. to 250° C.;
• and
• (i) a stress buffer layer supported by the substrate and formable at a temperature less than the thermal degradation temperature of the temperature-sensitive material such that the stress buffer layer is configured to minimize strain at an interface of the temperature-sensitive material;
• and/or (ii) a stress compensation layer supported by the substrate and formable at a temperature less than the thermal degradation temperature of the temperature-sensitive material such that the stress compensation layer is configured to counteract forces imparted to the substrate to thereby control an amount of substrate bow;
• wherein the temperature-sensitive material is between the substrate and the stress buffer layer and/or the stress compensation layer;
• wherein the electrical device further comprises a compressive layer overlying at least a part of the substrate;
• wherein the stress compensation layer and the compressive layer impart opposing forces to one another, and the stress compensation layer has an intrinsic tensile stress that counteracts an intrinsic compressive stress of the compressive layer to thereby control the amount that the substrate bows;
• wherein the compressive layer has an intrinsic compressive stress in the range from −50 MPa to −1 GPa;
• and
• wherein the stress compensation layer is between the temperature-sensitive material and the compressive layer.

An electrical device comprising:

• a substrate;
• a fragile material supported by the substrate, the fragile material having a KIC fracture toughness from 0.05 MPa·m1/2 to 1.0 MPa·m1/2;
• and
• (i) a stress buffer layer supported by the substrate and configured to minimize strain at an interface of the fragile material;
• and/or (ii) a stress compensation layer supported by the substrate and configured to counteract forces imparted to the fragile material;
• wherein a coefficient of thermal expansion (CTE) of the stress buffer layer and/or a CTE of the stress compensation layer are within a range from zero to 2.0×10−6/K of a CTE of the fragile material.

An electrical device comprising:

• a substrate;
• an aluminum nitride (AlNx) buffer layer overlying at least a portion of the substrate;
• and
• at least one other layer overlying at least a portion of the aluminum nitride (AlNx) buffer layer;
• wherein:
• the at least one other layer includes:
• an aluminum nitride (AlNx) tensile stress layer;
• and
• a compressive stress layer;
• the aluminum nitride tensile stress layer is configured to counteract forces imparted by at least the compressive stress layer to control an amount of bow of the substrate and minimize interfacial strain in the device;
• and
• the aluminum nitride buffer layer has an intrinsic stress value that is closer to zero than each of the compressive stress layer and the aluminum nitride tensile stress layer.