Silicon-based spin-qubit quantum magnetometer and radar system with all electrical control
OwnerPierre Gandolfoinventor
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Abstract
Embodiments of the present disclosure provide a spin-qubit quantum magnetometer and radar apparatus, entirely implemented in silicon and with full electrical control. By default, each detection element of the silicon-based spin-qubit quantum magnetometer and radar apparatus with full electrical control of the invention is built around a Field Effect Transistor (FET) on silicon over insulator with a back-gate as well as two front gates, which can be adjacent to one another along the Drain-Source FET channel or alternatively placed across that same channel and facing each other as corner gates.
Claims12
A spin-qubit quantum magnetometer sensing device built around a field-effect transistor on silicon over insulator with all-electrical control through a back-gate and two front-gates.
Dependencies are inferred from the claim text.