Photoelectric chip, manufacturing method and installation method

A photoelectric chip, which is a back-incident photoelectric chip, wherein the chip is provided with a light-splitting groove, and the light-splitting groove runs through an absorption layer of the chip;

• and
• a back of the chip is a light-entering side;
• the light-splitting groove is configured to transmit and split out one part of incident light, and the other part of the incident light enters the absorption layer for photovoltaic conversion,
• wherein the chip further comprising:
• a top layer, wherein the top layer is located on one side of a front of the absorption layer;
• the light-splitting groove is open in a direction away from the back of the chip and runs through the top layer, and a photosensitive area of the chip is formed in the top layer;
• an inner end of the photosensitive area is connected to the absorption layer, and an outer end of the photosensitive area is connected to a first electrode of the chip;
• the photosensitive area corresponds to an area in the absorption layer for performing photoelectric conversion;
• and the first electrode is located on the front of the chip.