Resonant tunneling devices including two-dimensional semiconductor materials and methods of detecting physical properties using the same
AssigneesResearch & Business Foundation Sungkyunkwan University, Samsung Electronics Co., Ltd.
InventorsSanghyun Jo, Heejun Yang, Hyeonjin Shin, Shoujun Zheng
Life of this patent
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Abstract
A resonant tunneling device includes a first two-dimensional semiconductor layer including a first two-dimensional semiconductor material, a first insulating layer on the first two-dimensional semiconductor layer; and a second two-dimensional semiconductor layer on the first insulating layer and including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material.
Claims32
A resonant tunneling device, comprising:
- a first two-dimensional semiconductor layer including a first two-dimensional semiconductor material;
- a first insulating layer on the first two-dimensional semiconductor layer;
- and
- a second two-dimensional semiconductor layer on the first insulating layer, the second two-dimensional semiconductor layer including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material,
- wherein a crystal lattice of the first two-dimensional semiconductor material and a crystal lattice of the second two-dimensional semiconductor material are aligned with each other, such that the first two-dimensional semiconductor material and the second two-dimensional semiconductor material are configured to have respective energy bands that are aligned with each other.
A method of detecting physical properties using a resonant tunneling device that includes a first two-dimensional semiconductor layer, the first two-dimensional semiconductor layer including a first two-dimensional semiconductor material, a first insulating layer on the first two-dimensional semiconductor layer, and a second two-dimensional semiconductor layer on the first insulating layer and including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material, wherein a crystal lattice of the first two-dimensional semiconductor material and a crystal lattice of the second two-dimensional semiconductor material are aligned with each other, the method comprising:
- causing the resonant tunneling device to detect one or more physical properties of the first and second two-dimensional semiconductor materials, based on a negative differential resistance (NDR) effect.
A method of detecting physical properties using a resonant tunneling device that includes a first two-dimensional semiconductor layer, the first two-dimensional semiconductor layer including a first two-dimensional semiconductor material;
- a first insulating layer on the first two-dimensional semiconductor layer;
- and a second two-dimensional semiconductor layer provided on the first insulating layer and including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material, wherein a crystal lattice of the first two-dimensional semiconductor material and a crystal lattice of the second two-dimensional semiconductor material are aligned with each other, the method comprising:
- causing the resonant tunneling device to detect one or more of a temperature, a wavelength of light incident on the resonant tunneling device, or an intensity of the light incident on the resonant tunneling device, based on a negative differential resistance (NDR) effect.
A resonant tunneling device, comprising:
- a first two-dimensional semiconductor layer including a first two-dimensional semiconductor material;
- a first insulating layer on the first two-dimensional semiconductor layer;
- and
- a second two-dimensional semiconductor layer on the first insulating layer, the second two-dimensional semiconductor layer including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material,
- wherein a crystal lattice of the first two-dimensional semiconductor material and a crystal lattice of the second two-dimensional semiconductor material are aligned with each other, such that the first two-dimensional semiconductor material and the second two-dimensional semiconductor material are configured to have respective energy bands that are aligned with each other.
Dependencies are inferred from the claim text.