Deep gate-all-around semiconductor device having germanium or group III-V active layer

A non-planar semiconductor device, comprising:

• a hetero-structure disposed above a substrate, the hetero-structure comprising a hetero junction between an upper layer and a lower layer of differing composition;
• an active layer disposed above the hetero-structure and having a composition different from the upper and lower layers of the hetero-structure;
• a gate structure disposed on and surrounding a channel region of the active layer, and disposed in a trench in the upper layer and at least partially in the lower layer of the hetero-structure;
• one or more nanowires disposed in a vertical arrangement above the active layer, wherein the gate structure is disposed on and surrounds each of the nanowires;
• source and drain regions disposed on the substrate and in the upper layer on either side of the gate structure;
• and
• isolation regions adjacent the source and drain regions and disposed at least partially into the hetero-structure.