Fin field-effect transistor device with composite liner for the Fin
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWan-Yi Kao, Chung-Chi Ko
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Abstract
A method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a liner over the fin; performing a surface treatment process to convert an upper layer of the liner distal to the fin into a conversion layer, the conversion layer comprising an oxide or a nitride of the liner; forming isolation regions on opposing sides of the fin after the surface treatment process; forming a gate dielectric over the conversion layer after forming the isolation regions; and forming a gate electrode over the fin and over the gate dielectric.
Claims20
A semiconductor device comprising:
- a fin protruding above a substrate;
- isolation regions on opposing sides of the fin;
- a gate structure over the fin;
- and
- a composite liner over the fin and under the gate structure, comprising:
- a first layer of a first semiconductor material, the first layer contacting and extending along sidewalls and an upper surface of the fin, wherein a first portion of the first layer along the sidewalls of the fin and a second portion of the first layer along the upper surface of the fin have a same homogenous composition, wherein the second portion of the first layer extends further from the substrate than the upper surface of the fin;
- and
- a second layer of a first dielectric material, the second layer being distal to the fin and disposed between the first layer and the isolation regions.
A semiconductor device comprising:
- a fin protruding above a substrate;
- isolation regions on opposing sides of the fin;
- a composite liner comprising:
- an interior layer contacting and extending continuously along sidewalls of the fin from the substrate to an upper surface of the fin distal from the substrate, wherein the upper surface of the fin is interposed between the interior layer and the substrate;
- and
- an exterior layer over the interior layer and below an upper surface of the isolation regions distal from the substrate, wherein the exterior layer is disposed between the interior layer and the isolation regions, wherein the interior layer is a first semiconductor material, and the exterior layer is a first dielectric material, wherein the fin comprises a second semiconductor material different from the first semiconductor material;
- a gate dielectric layer over the upper surface of the isolation regions, wherein the gate dielectric layer contacts and extends along the interior layer of the composite liner;
- and
- a gate electrode over the gate dielectric layer.
A semiconductor device comprising:
- a fin protruding above a substrate;
- isolation regions on opposing sides of the fin;
- a composite liner on the fin, comprising:
- an interior layer around and contacting a channel region in the fin, the interior layer comprising a first semiconductor material, wherein the interior layer extends continuously along an upper surface of the fin from a first sidewall of the fin to a second opposing sidewall of the fin, wherein the upper surface of the fin is distal from the substrate;
- and
- an exterior layer on the interior layer, the exterior layer comprising a first dielectric material, wherein the exterior layer of the composite liner is disposed between the interior layer and the isolation regions, wherein the fin comprises a second semiconductor material different from the first semiconductor material;
- a gate dielectric layer on the interior layer, wherein the gate dielectric layer contacts and extends along the interior layer of the composite liner;
- and
- a gate electrode over the gate dielectric layer.
Dependencies are inferred from the claim text.