Integrated circuits and methods of manufacturing the same

A method of manufacturing an integrated circuit, the method comprising:

• alternately forming a plurality of semiconductor layers and a plurality of sacrificial layers on a substrate;
• patterning the plurality of semiconductor layers and the plurality of sacrificial layers to form a channel stack extending in a first direction;
• forming a dummy gate structure on the channel stack, the dummy gate structure including a dummy gate insulating layer pattern and a dummy gate;
• forming a spacer structure on a sidewall of the dummy gate structure, the spacer structure including a first spacer layer and a second spacer layer, the first spacer layer including a portion overhanging laterally and outwardly;
• forming a plurality of semiconductor patterns and forming a recess region by removing a portion of the channel stack, the portion of the channel stack being not covered by the spacer structure, and an uppermost one of the plurality of semiconductor patterns including an inclined sidewall;
• forming a semiconductor layer in the recess region, a portion of the semiconductor layer contacting the inclined sidewall, and the portion of the semiconductor layer vertically overlapping the spacer structure;
• forming a gate space by removing the dummy gate structure and the plurality of sacrificial layers;
• and
• forming a gate electrode in the gate space,
• wherein a top surface of the uppermost one of the plurality of semiconductor patterns has a first width in the first direction, and a bottom surface of the uppermost one of the plurality of semiconductor patterns has a second width smaller than the first width in the first direction.

A method of manufacturing an integrated circuit, the method comprising:

• alternately forming a plurality of semiconductor layers and a plurality of sacrificial layers on a substrate;
• patterning the plurality of semiconductor layers and the plurality of sacrificial layers to form a channel stack extending in a first direction;
• forming a dummy gate structure on the channel stack, the dummy gate structure including a dummy gate insulating layer pattern and a dummy gate;
• forming a spacer structure on a sidewall of the dummy gate structure, the spacer structure including a first spacer layer and a second spacer layer, the first spacer layer including a portion overhanging laterally and outwardly, and the second spacer layer including a lateral extension extending outwardly;
• forming a plurality of semiconductor patterns and forming a recess region by removing a portion of the channel stack, the portion of the channel stack being not covered by the spacer structure;
• forming a semiconductor layer in the recess region, a portion of the semiconductor layer being covered by the lateral extension;
• forming a gate space by removing the dummy gate structure and the plurality of sacrificial layers;
• and
• forming a gate electrode in the gate space,
• wherein a top surface of an uppermost one of the plurality of semiconductor patterns has a first width in the first direction, and a bottom surface of the uppermost one of the plurality of semiconductor patterns has a second width smaller than the first width in the first direction.