Vertical power devices fabricated using implanted methods

A method for forming a vertical semiconductor device comprising:

• providing a precursor comprising a substrate, a drift region over the substrate, and an upper precursor region, wherein a top surface of the precursor is substantially planar, and the substrate and the drift region are doped with a first dopant of a first polarity;
• providing a series of implants with a second dopant in the upper precursor region via the top surface to form each of at least two gate regions, such that each implant of the series of implants is provided at a different depth below the top surface, wherein:
• the second dopant has a second polarity opposite that of the first polarity;
• at least a portion of a channel region is provided between the at least two gate regions;
• and
• a conducting gap is defined within the channel region and between opposing sidewalls of the at least two gate regions.