Silicon carbide field-effect transistors
AssigneeSemiconductor Components Industries, LLC
InventorAndrei Konstantinov
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Abstract
In a general aspect, a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) can include a substrate of a first conductivity type, a drift region of the first conductivity type disposed on the substrate, a spreading layer of the first conductivity type disposed in the drift region, a body region of a second conductivity type disposed in the spreading layer, and a source region of the first conductivity type disposed in the body region. The SiC MOSFET can also include a gate structure that includes a gate oxide layer, an aluminum nitride layer disposed on the gate oxide layer, and a gallium nitride layer of the second conductivity disposed on the aluminum nitride layer.
Claims20
A silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) comprising:
- a SiC substrate of a first conductivity type;
- a drift region of the first conductivity type disposed on the SiC substrate;
- a spreading layer of the first conductivity type disposed in the drift region;
- a body region of a second conductivity type disposed in the spreading layer;
- a source region of the first conductivity type disposed in the body region;
- and
- a gate structure including:
- a gate oxide layer;
- an aluminum nitride (AlN) layer disposed on the gate oxide layer;
- and
- a gallium nitride (GaN) layer of the second conductivity type disposed on the AlN layer.
A silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) comprising:
- an n-type SiC substrate;
- an n-type drift region disposed on the n-type SiC substrate;
- an n-type spreading layer disposed in the drift region;
- a p-type body region disposed in the spreading layer;
- an n-type source region disposed in the body region;
- and
- a gate structure including:
- a gate oxide layer;
- an aluminum nitride (AlN) layer disposed on the gate oxide layer;
- and
- a p-type gallium nitride (GaN) layer disposed on the AlN layer.
Dependencies are inferred from the claim text.