High electron mobility transistor with improved barrier layer
AssigneeUnited Microelectronics Corp.
InventorPo-Yu Yang
Life of this patent
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Abstract
A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a gate dielectric layer on the barrier layer; forming a work function metal layer on the gate dielectric layer; patterning the work function metal layer and the gate dielectric layer; forming a gate electrode on the work function metal layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.
Claims15
A method for fabricating high electron mobility transistor (HEMT), comprising:
- forming a buffer layer on a substrate;
- forming a barrier layer on the buffer layer;
- forming a gate dielectric layer on and directly contacting a top surface of the barrier layer;
- forming a work function metal layer on the gate dielectric layer;
- patterning the work function metal layer and the gate dielectric layer;
- forming a gate electrode on the work function metal layer;
- and
- forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.
A high electron mobility transistor (HEMT), comprising:
- a buffer layer on a substrate;
- a first barrier layer on the buffer layer;
- a gate electrode on the first barrier layer;
- a gate dielectric layer between the gate electrode and the first barrier layer;
- a work function metal layer on gate dielectric layer;
- a second barrier layer adjacent to two sides of the gate electrode, wherein the gate dielectric layer directly contacts a top surface of the second barrier layer;
- and
- a source electrode and a drain electrode adjacent to two sides of the gate electrode on the second barrier layer.
Dependencies are inferred from the claim text.