Back to results
US 11,894,452 B2Granted
Semiconductor device, method for manufacturing the same, power circuit, and computer
AssigneeKabushiki Kaisha Toshiba
InventorsTatsuo Shimizu, Masahiko Kuraguchi, Toshiya Yonehara, Akira Mukai
Life of this patent
Estimating the term…
Abstract
A semiconductor device according to an embodiment includes a nitride semiconductor layer; an insulating layer; a first region disposed between the nitride semiconductor layer and the insulating layer and containing at least one element of hydrogen and deuterium; and a second region disposed in the nitride semiconductor layer, adjacent to the first region, and containing fluorine.
Claims12
A semiconductor device comprising:
- a nitride semiconductor layer;
- a silicon oxide layer;
- and
- a first region disposed between the nitride semiconductor layer and the silicon oxide layer and containing at least one element of hydrogen and deuterium,
- wherein in a concentration distribution of the at least one element in the silicon oxide layer, the first region, and the nitride semiconductor layer, a distance between a first position at which a concentration of the at least one element has a maximum value and a second position present on the side of the nitride semiconductor layer with respect to the first position and having the concentration of the at least one element which is two orders of magnitude lower than the maximum value is 1 nm or less.
2 more elements
A semiconductor device comprising:
- a nitride semiconductor layer;
- a silicon oxide layer;
- and
- a first region disposed between the nitride semiconductor layer and the silicon oxide layer and containing at least one element of hydrogen and deuterium,
- wherein in the concentration distribution of the at least one element in the silicon oxide layer, the first region, and the nitride semiconductor layer, a first peak is within the first region, and a full width at half maximum of the first peak is 2 nm or less.
2 more elements
Dependencies are inferred from the claim text.