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US 11,894,451 B2Granted
Semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorAryan Afzalian
Life of this patent
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Abstract
A semiconductor device includes first and second source/drain regions, a core channel region, a barrier layer, a shell, and a gate stack. The core channel region is between the first and second source/drain regions and is doped with first dopants. The barrier layer is between the core channel region and the second source/drain region and is doped with second dopants. The shell is over the core channel region and the barrier layer. The gate stack is over the shell.
Claims20
A semiconductor device comprising:
- first and second source/drain regions;
- a core channel region between the first and second source/drain regions and doped with first dopants;
- a barrier layer between the core channel region and the second source/drain region and doped with second dopants;
- a shell over the core channel region and the barrier layer;
- and
- a gate stack over the shell.
3 more elements
A semiconductor device, comprising:
- first and second source/drain regions;
- a core channel region between the first and second source/drain regions;
- a barrier layer between the core channel region and the second source/drain region;
- a shell over the core channel region and the barrier layer;
- and
- a gate stack over the shell, wherein the gate stack comprises a first gate over the core channel region and a second gate over the barrier layer and having a different work function than the first gate.
3 more elements
A semiconductor device comprising:
- a core channel region;
- first and second source/drain regions on opposite sides of the core channel region;
- a barrier layer between the core channel region and the second source/drain region;
- a shell surrounding the core channel region and the barrier layer, wherein the shell comprises a channel portion surrounding the core channel region and a barrier portion surrounding the barrier layer, and a dopant concentration of the channel portion of the shell is different from a dopant concentration of the barrier portion of the shell;
- and
- a first gate surrounding the shell.
3 more elements
Dependencies are inferred from the claim text.