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US 11,894,441 B2Granted
High electron mobility transistor and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou
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Abstract
A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.
Claims7
A method for fabricating high electron mobility transistor (HEMT), comprising:
- forming a buffer layer on a substrate;
- forming a first barrier layer on the buffer layer;
- forming a first hard mask on the first barrier layer;
- removing the first hard mask and the first barrier layer to form a recess;
- forming a second barrier layer in the recess while the first hard mask is on the first barrier layer and sidewalls of the first hard mask and the second barrier layer are aligned;
- and
- forming a p-type semiconductor layer on the second barrier layer and directly contacting the first hard mask, wherein a topmost surface of the first hard mask is lower than a top surface of the p-type semiconductor layer.
4 more elements
Dependencies are inferred from the claim text.