Contact plug structure of semiconductor device and method of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPei-Yu Chou, Jr-Hung Li, Tze-Liang Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor device a method of forming the same are provided. A semiconductor device includes a gate stack over a substrate. A first dielectric layer is over the gate stack. The first dielectric layer includes a first material. A second dielectric layer is over the first dielectric layer. The second dielectric layer includes a second material different from the first material. A first conductive feature is adjacent the gate stack. A second conductive feature is over and in physical contact with a topmost surface of the first conductive feature. A bottommost surface of the second conductive feature is in physical contact with a topmost surface of the second dielectric layer.
Claims20
A method comprising:
- forming a gate stack over a substrate;
- recessing the gate stack to form a first recess;
- forming a cap layer over the gate stack in the first recess, the cap layer comprising a first material over the gate stack and a second material over the first material, the second material being different from the first material, wherein forming the cap layer comprises:
- filling the first recess with the first material;
- and
- performing an oxygen addition process on an upper portion of the first material, the oxygen addition process converting the upper portion of the first material into the second material;
- forming a first conductive feature adjacent the gate stack;
- and
- forming a second conductive feature over the first conductive feature, the second conductive feature being in physical contact with a topmost surface of the cap layer and a topmost surface of the first conductive feature.
A method of forming a semiconductor device, the method comprising:
- forming a gate stack over a substrate;
- forming a first dielectric layer over the gate stack, the first dielectric layer comprising a first material;
- forming a second dielectric layer over the first dielectric layer, the second dielectric layer comprising a second material different from the first material;
- forming a third dielectric layer over the second dielectric layer;
- forming a first conductive feature adjacent the gate stack, wherein a topmost surface of the first conductive feature is level with a topmost surface of the third dielectric layer in a cross-sectional view;
- and
- forming a second conductive feature over and in physical contact with the topmost surface of the first conductive feature in the cross-sectional view, a bottommost surface of the second conductive feature in the cross-sectional view being in physical contact with a topmost surface of the second dielectric layer in the cross-sectional view.
A method comprising:
- forming a conductive element over a substrate;
- forming a first dielectric layer over the substrate, the conductive element being laterally offset from the first dielectric layer;
- recessing the conductive element to form a first recess;
- forming a cap layer over the conductive element in the first recess, the cap layer comprising a first material layer and a second material layer over the first material layer, the first material layer and the second material layer being different materials, wherein the second material layer comprises an oxide of a material of the first material layer, wherein forming the cap layer comprises:
- filling the first recess with a first material;
- and
- performing an oxygen process on an upper portion of the first material, the oxygen process converting the upper portion of the first material into the second material layer;
- forming a first conductive feature in the first dielectric layer;
- forming a second dielectric layer on the second material layer, wherein the second dielectric layer directly contacts the second material layer, wherein the second dielectric layer comprises a same material as the first material layer;
- and
- forming a second conductive feature over the first conductive feature, the second conductive feature being in physical contact with a top surface of the cap layer and a top surface of the first conductive feature.
Dependencies are inferred from the claim text.