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US 11,894,433 B2Granted
Method and structure to improve stacked FET bottom EPI contact
AssigneeInternational Business Machines Corporation
InventorsAlexander Reznicek, Ruilong Xie, Chen Zhang, Kangguo Cheng
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Abstract
A stacked semiconductor device comprising a lower source/drain epi located on top of a bottom dielectric layer. An isolation layer located on top of the lower source/drain epi and an upper source/drain epi located on top of the isolation layer. A lower electrical contact that is connected to the lower source/drain epi, wherein the lower electrical contact is in direct contact with multiple side surfaces of the lower source/drain epi.
Claims16
A stacked semiconductor device comprising:
- a lower source/drain epi located on top of a bottom dielectric layer;
- an isolation layer located on top of the lower source/drain epi;
- an upper source/drain epi located on top of the isolation layer;
- and
- a lower electrical contact that is connected to the lower source/drain epi, wherein the lower electrical contact is in direct contact with multiple side surfaces of the lower source/drain epi, wherein the lower electrical contact extends under the lower source/drain epi.
2 more elements
A stacked semiconductor device comprising:
- a lower source/drain epi located on top of a dielectric layer, wherein the lower source/drain epi is comprised of a n-type epi, or a p-type epi;
- an isolation layer located on top of the lower source/drain epi and the side of the lower source/drain epi;
- an upper source/drain epi located on top of the isolation layer, wherein the upper source/drain epi is comprised of a n-type epi, or a p-type epi;
- an interlayer dielectric formed around the upper source/drain epi;
- an upper electrical contact that extends through the interlayered dielectric to connect to the upper source/drain epi;
- and
- a lower electrical contact that extends through the interlayer dielectric and the isolation layer to be connected to the lower source/drain epi, wherein the lower electrical contact is in direct contact with multiple surfaces of the lower source/drain epi, wherein the lower electrical contact extends under the lower source/drain epi.
4 more elements
Dependencies are inferred from the claim text.