Back to results
US 11,894,431 B2Granted
Memory device with fixed negative charge plug
AssigneeSK hynix Inc.
InventorsDae Hwan Yun, Gil Bok Choi
Life of this patent
Estimating the term…
Abstract
The present technology includes a memory device. The memory device includes a stack structure including word lines and a select line, a vertical hole vertically penetrating the stack structure, and a memory layer, a channel layer, and a plug, sequentially formed along an inner side surface of the vertical hole. The plug includes a material layer having a fixed negative charge.
Claims16
A memory device comprising:
- a stack structure including word lines and a select line;
- a vertical hole vertically penetrating the stack structure;
- and
- a memory layer, a channel layer, and a plug, sequentially formed along an inner side surface of the vertical hole,
- wherein the plug includes a material layer having a fixed negative charge, and
- wherein a bottom surface of the material layer is located between a bottom surface and a top surface of the select line.
3 more elements
A memory device comprising:
- a stack structure including first select lines adjacent to bit lines, second select lines adjacent to a source line, and word lines between the first and second select lines;
- a vertical hole vertically penetrating the stack structure;
- and
- a memory layer, a channel layer, and a plug, sequentially formed along an inner side surface of the vertical hole,
- wherein the plug includes a material layer having a fixed negative charge, and
- wherein a bottom surface of the material layer is located between a bottom surface of a first select line located at a lowermost end among the first select lines and a top surface of a first select line located at an uppermost end among the first select lines.
3 more elements
Dependencies are inferred from the claim text.